IRF7413ZTRPBF

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IRF7413ZTRPBF

MOSFET N-CH 30V 13A 8SO

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 13A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 10mOhm @ 13A, 10V
Vgs(th)(Max)@Id 2.25V @ 25µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1210 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Vue d'ensemble

Description

The IRF7413ZTRPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a low on-resistance (RDS(on)), making it efficient for power management in various electronic devices. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 25A, it is suitable for applications such as power supplies, motor control, and load switching.
The device is packaged in a TO-220 format, allowing for effective heat dissipation. Its fast switching capabilities make it ideal for use in PWM (pulse-width modulation) circuits and other high-frequency applications. The IRF7413ZTRPBF is characterized by its ruggedness and reliability, with a built-in body diode for reverse conduction.
It is crucial to consider thermal management and proper gate drive for optimal performance. Overall, the IRF7413ZTRPBF is a versatile component widely used in automotive, industrial, and consumer electronics.

Features

The IRF7413ZTRPBF is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The continuous drain current (Id) is up to 30A, allowing it to handle significant loads.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.045Ω at Vgs = 10V, which enhances efficiency and reduces power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, enabling it to be driven by lower gate voltages.
5. Package Type: The device is available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Fast Switching Speed: It supports high-speed switching applications, making it ideal for power supplies and motor control.
These features make the IRF7413ZTRPBF suitable for applications in power electronics, automotive, and industrial sectors.

Package

The IRF7413ZTRPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs and allows for efficient heat dissipation and mounting on heatsinks.

Pinout

The IRF7413ZTRPBF is a dual N-channel MOSFET with a total of 8 pins. Its primary function is to switch and amplify electronic signals in various applications, including power management and motor control.
Here is the pin configuration:
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first N-channel MOSFET.
3. Source 1 (S1): Connects to the ground or a lower potential for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second N-channel MOSFET.
6. Source 2 (S2): Connects to the ground or a lower potential for the second N-channel MOSFET.
7. Drain Connection (D): Common connection point for both drains (optional).
8. Source Connection (S): Common connection point for both sources (optional).
This component is often used in applications requiring efficient switching capabilities.

Manufacturer

The IRF7413ZTRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in the production of a wide range of products, including power semiconductors, microcontrollers, sensors, and automotive solutions. The company focuses on areas such as automotive, industrial, and security technology, contributing to advancements in energy efficiency, mobility, and connectivity. Infineon is known for its innovation and strives to enable a sustainable future through its semiconductor solutions.

Application

The IRF7413ZTRPBF is a dual N-channel MOSFET typically used in applications such as power management, motor control, DC-DC converters, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive systems, industrial automation, and consumer electronics. Additionally, it can be employed in battery management systems and load switching applications.

Equivalent

The IRF7413ZTRPBF is an N-channel MOSFET. Equivalent products include:
1. IRF7413
2. STP16NF06
3. AO3400
4. BSS138
5. FQP30N06L
Always verify specifications like voltage, current, and RDS(on) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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