IRF7403TRPBF

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IRF7403TRPBF

MOSFET N-CH 30V 8.5A 8SO

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Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number IRF7403

Vue d'ensemble

Description

The IRF7403TRPBF is a high-speed, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features low on-resistance, high-speed operation, and can handle significant current levels, making it suitable for use in power management, motor control, and other applications requiring efficient switching.
Key specifications include a maximum continuous drain current rating of approximately 30A and a drain-source voltage (V_DS) of 30V. The MOSFET has a low gate threshold voltage, allowing it to be easily driven by low-voltage logic levels. The IRF7403TRPBF is housed in a TO-220 package, providing effective thermal dissipation.
This component is particularly valued in circuits where rapid switching and minimal power loss are critical. Its RoHS-compliant designation indicates that it meets environmental regulations regarding hazardous materials. Overall, the IRF7403TRPBF is a reliable choice for engineers designing efficient power circuits.

Features

The IRF7403TRPBF is a high-speed, N-channel MOSFET designed for low-voltage, high-speed switching applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
- Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 55A at a 25°C junction temperature.
- R_DS(on): Features a low on-state resistance, typically around 0.025Ω, which enhances efficiency by reducing conduction losses.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy driving by standard logic levels.
- Fast Switching Speed: Designed for fast switching applications, making it suitable for power management and control circuits.
- Package: Available in a TO-220 package, facilitating heat dissipation and easy mounting.
Designed for applications such as DC-DC converters, motor drives, and power amplifiers, the IRF7403TRPBF is an efficient choice for various electronic designs.

Package

The IRF7403TRPBF is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This surface-mount package is commonly used for integrated circuits and has eight pins.

Manufacturer

The IRF7403TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial power control, and digital security. The company is known for its innovative products in power management, microcontrollers, and sensor technology, serving a wide range of industries such as automotive, consumer electronics, and telecommunications. Infineon is recognized for its commitment to sustainability and energy efficiency in its product offerings.

Application

The IRF7403TRPBF is a quad high-speed MOSFET driver used in various applications, including power supply circuits, motor drives, and switch-mode power supplies. It is suitable for driving N-channel MOSFETs and IGBTs in high-frequency switching applications, enabling efficient control in automotive, industrial, and consumer electronics. Its capability for fast switching and low propagation delays makes it ideal for synchronous rectification and high-performance DC-DC converters.

Equivalent

The IRF7403TRPBF is a dual N-channel MOSFET. Equivalent products include the following:
1. BSS138 - a smaller N-channel MOSFET.
2. 2N7000 - another N-channel MOSFET with similar applications.
3. IRLZ44N - provides a higher current capacity.
4. FQP30N06L - offers comparable performance in switching applications.
Always verify specific ratings and applications to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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