IRF7389TRPBF

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IRF7389TRPBF

MOSFET N/P-CH 30V 8-SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
RdsOn(Max)@IdVgs 29mOhm @ 5.8A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 33nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 650pF @ 25V
Power-Max 2.5W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The IRF7389TRPBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It is part of the International Rectifier (now part of Infineon) product line and is notable for its low on-resistance and high current handling capabilities, making it suitable for power management in various electronic circuits.
Key specifications include a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) of up to 50A at a specified temperature. The IRF7389TRPBF features a low gate threshold voltage (VGS(th)), allowing for efficient operation with lower drive voltages. Its robust thermal characteristics ensure reliable performance in demanding environments.
The package designation "TRPBF" indicates it is available in a surface-mount package and is RoHS compliant, meaning it is free from hazardous substances. This MOSFET is widely used in applications such as power supplies, motor drivers, and lighting control systems due to its efficiency and reliability.

Features

The IRF7389TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 75A, enabling it to drive significant loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 4.5 mΩ at V_GS = 10V, which minimizes power loss and improves thermal performance.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It features a TO-220 package that facilitates efficient heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for operation with lower gate drive voltages.
Overall, the IRF7389TRPBF is suitable for power management, motor control, and other applications requiring efficient switching and high current handling.

Package

The IRF7389TRPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The IRF7389TRPBF is a power MOSFET with a total of 8 pins. It is designed for high-speed switching applications and can handle high voltage and current. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or negative side of the circuit.
4. Body (B): The internal substrate that is typically connected to the source.
The specific pin configuration is essential for proper circuit integration, and the device is popular in applications such as power management, motor control, and inverters due to its low on-resistance and fast switching capabilities. Always refer to the manufacturer's datasheet for detailed electrical characteristics, thermal performance, and specific pin assignments.

Manufacturer

The IRF7389TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor solutions that cater to various industries, including automotive, industrial, and consumer electronics. The company focuses on power management, sensor technologies, and security solutions, leveraging advanced technologies to enhance energy efficiency and performance in electronic systems. Infineon is known for its commitment to innovation and sustainability, aiming to enable a more connected and efficient world through its products.

Application

The IRF7389TRPBF is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, power switching, and load switching in various electronic devices. It is suitable for high-efficiency applications due to its low on-resistance and fast switching capabilities, making it ideal for battery-powered devices and power supplies in consumer electronics, automotive, and industrial equipment.

Equivalent

The IRF7389TRPBF is a N-channel MOSFET. Equivalent products include:
1. STP16NF06 - similar voltage and current ratings.
2. IRF3205 - higher current handling.
3. AOD404 - comparable specifications.
4. BSS138 - lower power applications.
Always verify specific parameters such as Vds, Id, and Rds(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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