IRF7351TRPBF

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IRF7351TRPBF

MOSFET 2N-CH 60V 8A 8-SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 8A
RdsOn(Max)@IdVgs 17.8mOhm @ 8A, 10V
Vgs(th)(Max)@Id 4V @ 50µA
GateCharge(Qg)(Max)@Vgs 36nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 1330pF @ 30V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The IRF7351TRPBF is a N-channel MOSFET designed for power management applications. It features a low on-resistance (R_DS(on)), high-speed switching capability, and is suitable for use in various applications including power converters, motor control, and load switching.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 60A, and a gate threshold voltage (V_GS(th)) ranging from 1V to 2V. It operates efficiently with a low gate charge and fast switching speeds, making it ideal for high-frequency applications.
The IRF7351TRPBF is packaged in a TO-220 format, which aids in thermal dissipation, allowing for better performance in demanding environments. It is also RoHS compliant, ensuring it meets environmental standards.
This MOSFET is widely used due to its reliability and efficiency in power management solutions.

Features

The IRF7351TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: V_DS (Drain-Source Voltage) of 50V, providing robust performance in various circuits.
- Current Rating: I_D (Continuous Drain Current) of up to 38A, suitable for high-current applications.
- R_DS(on): Low on-resistance (approximately 0.035 ohm at V_GS = 10V), which minimizes conduction losses.
- Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2.5V, enabling operation with lower gate voltages.
- Fast Switching Speed: Enhanced speed characteristics for improved efficiency in switching applications.
- Package Type: Available in a TO-220 package, making it easy to heat sink and mount in various applications.
- Applications: Ideal for power management, motor drives, and DC-DC converters.
These features make the IRF7351TRPBF suitable for a range of power electronics applications requiring efficient performance and reliability.

Package

The IRF7351TRPBF is packaged in a TO-220 format. This package type features a metal tab for effective heat dissipation and is commonly used for power MOSFET applications.

Pinout

The IRF7351TRPBF is an N-channel MOSFET with a total of 8 pins. Here’s a brief overview of its pin functions:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn the device on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it's on.
3. Source (S): The terminal through which the current enters the MOSFET; connected to the ground in common-source configurations.
4. Body Diode (D-S): Internal diode that allows current to flow from the source to the drain when the MOSFET is off, providing protection against reverse current.
For the specific pinout, refer to the manufacturer's datasheet, as the arrangement can vary slightly based on the package type (e.g., TO-220, DPAK). The IRF7351TRPBF is designed for high-speed switching applications and is commonly used in power management and conversion circuits.

Manufacturer

The IRF7351TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in various sectors including automotive, industrial, and communication technologies. The company focuses on providing innovative solutions in power management, microcontrollers, and sensors, among other areas. Infineon is known for its commitment to sustainability and energy efficiency in its products, making it a key player in the semiconductor industry.

Application

The IRF7351TRPBF is a N-channel MOSFET primarily used in power management applications, including switch-mode power supplies, DC-DC converters, and motor control. Its low on-resistance and fast switching capabilities make it suitable for applications in energy-efficient designs, automotive electronics, and power amplifiers. Additionally, it can be employed in high-frequency applications and as a load switch in various electronic devices.

Equivalent

The IRF7351TRPBF is a N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. FQP30N06L - Fairchild Semiconductor
3. BSS140 - N-channel, low voltage
4. SIQ40N06 - Vishay
Ensure to check specific ratings and parameters like V_DS, I_D, and R_DS(on) for compatibility in your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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