IRF7341GTRPBF

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IRF7341GTRPBF

MOSFET N-CH 55V 5.1A

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 55V
Current-ContinuousDrain(Id)@25°C 5.1A
RdsOn(Max)@IdVgs 50mOhm @ 5.1A, 10V
Vgs(th)(Max)@Id 1V @ 250µA (Min)
GateCharge(Qg)(Max)@Vgs 44nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 780pF @ 25V
Power-Max 2.4W
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The IRF7341GTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a low on-resistance (R_DS(on)), which improves efficiency and reduces heat generation in power conversion circuits. This device supports a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 70A, making it suitable for high-power applications such as motor drives, power supplies, and DC-DC converters.
The IRF7341GTRPBF is packaged in a TO-220 form factor, allowing for easy thermal management and mounting. It is also RoHS compliant, indicating it adheres to environmental regulations concerning hazardous materials. Key characteristics include fast switching speeds and low gate charge, which make it ideal for applications requiring rapid operation. Overall, the IRF7341GTRPBF is a reliable choice for designers seeking efficient power management solutions.

Features

The IRF7341GTRPBF is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 50A, allowing it to manage substantial loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, which improves efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for low-voltage drive capabilities.
5. Package Type: It comes in a TO-220 package, which aids in heat dissipation and easy mounting.
6. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications like DC-DC converters, motor drivers, and power management systems.
These attributes make the IRF7341GTRPBF a versatile choice for electronic circuits requiring reliable high-performance switching.

Package

The IRF7341GTRPBF is packaged in a TO-220 type package. This package provides efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRF7341GTRPBF is a N-channel MOSFET with a pin count of 8. Its primary functions include serving as a switch in various electronic circuits, particularly in power management applications.
Here is the pin configuration:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The output terminal where current flows out when the device is on.
3. Source (S): The terminal where current flows into the device when it is operating.
4. Gate (G): Duplicate for dual-gate configuration.
5. Drain (D): Duplicate for dual-drain configuration.
6. Source (S): Duplicate for dual-source configuration.
7. Gate (G): Additional gate for specific applications.
8. Drain (D): Additional drain for expanded functionality.
This device is suitable for applications like power supplies, motor drivers, and other switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRF7341GTRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in semiconductor solutions for automotive, industrial, and consumer electronics applications. The company focuses on various product areas, including power management, sensor technologies, and microcontrollers. Infineon is known for its innovations in power electronics and energy efficiency, serving a diverse range of industries such as automotive, industrial automation, and the Internet of Things (IoT).

Application

The IRF7341GTRPBF is a N-channel MOSFET used primarily in power management applications. Key areas include DC-DC converters, motor control, power switching, and load management in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for efficient power amplifiers and inverters as well.

Equivalent

The IRF7341GTRPBF is an N-channel MOSFET. Equivalent products include the BUK7YB6-40, AOD6N60, and FQD7N60. For precise applications, always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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