IRF7329TRPBF

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IRF7329TRPBF

MOSFET 2P-CH 12V 9.2A 8SO

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Spécifications

Series HEXFET®
Part Status Last Time Buy
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 9.2A
Rds On (Max) @ Id, Vgs 17mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF732

Vue d'ensemble

Description

The IRF7329TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (RDS(on)), allowing for reduced power losses and improved thermal performance. This MOSFET is suitable for various applications, including DC-DC converters, motor drivers, and power management systems in consumer electronics and industrial devices.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of approximately 50A, and a threshold voltage (VGS(th)) range of 1.0V to 2.0V. The device is characterized by fast switching speeds, making it ideal for high-frequency applications.
Additionally, the IRF7329TRPBF is housed in a TO-220 package, which facilitates easy heat dissipation and robust mounting. This component is also compliant with RoHS standards, ensuring it meets environmental regulations. Overall, the IRF7329TRPBF offers a reliable solution for designers seeking high-performance MOSFETs in compact, energy-efficient circuits.

Features

The IRF7329TRPBF is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 62A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance of approximately 0.017Ω, enhancing efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate-source threshold voltage ranges from 2V to 4V, allowing for easy drive with logic-level signals.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The device supports fast switching speeds, making it ideal for applications such as power supplies and motor control.
7. Thermal Resistance: Low thermal resistance ensures better thermal management.
Overall, the IRF7329TRPBF is an efficient, robust choice for various electronic designs.

Package

The IRF7329TRPBF is packaged in a TO-220 form factor, which is suitable for power applications due to its efficient heat dissipation capabilities.

Pinout

The IRF7329TRPBF is a N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching; applying a voltage turns the device on.
2. Drain (D): The primary output terminal where the load is connected; current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which the current exits the device; typically connected to ground in low-side switching applications.
4. Body Diode (internal): Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The IRF7329TRPBF is designed for high efficiency and fast switching applications, making it suitable for power management and motor control circuits.

Manufacturer

The IRF7329TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company that specializes in the development and production of a variety of semiconductor solutions, including power management, automotive, industrial, and communication technologies. The company is known for its innovative products that enhance efficiency and performance in electronic systems, making it a key player in the semiconductor industry. Infineon operates in various sectors, providing components for applications ranging from automotive electronics to renewable energy systems.

Application

The IRF7329TRPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control systems. It is suitable for high-speed switching applications, enabling efficient energy conversion and regulation. Additionally, it can be used in audio amplifiers, lighting control, and inverters, providing features such as low on-resistance and fast switching capabilities for improved performance.

Equivalent

The IRF7329TRPBF is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS138. Always verify specifications such as voltage, current ratings, and package type before substituting to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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