IRF7313TRPBF

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IRF7313TRPBF

MOSFET 2N-CH 30V 6.5A 8-SOIC

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 6.5A
RdsOn(Max)@IdVgs 29mOhm @ 5.8A, 10V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 33nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 650pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Vue d'ensemble

Description

The IRF7313TRPBF is a N-channel MOSFET designed for power management applications. It features a low on-resistance (R_DS(on)), which minimizes conduction losses and enhances efficiency in switching applications. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of up to 35A, it is suitable for various electronic circuits, including power supplies and motor control.
This MOSFET is housed in a compact TO-220 package, making it easy to mount on PCBs. Its gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for compatibility with low-voltage drive circuits. The IRF7313TRPBF is also RoHS compliant, ensuring it meets environmental standards.
Overall, this device is well-suited for applications requiring efficient switching and high current handling, making it a popular choice in consumer electronics, automotive, and industrial sectors.

Features

The IRF7313TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: 30V maximum drain-source voltage (Vds).
- Current Rating: Continuous drain current (Id) up to 50A.
- Rds(on): Low on-resistance typically around 0.015Ω at Vgs = 10V, enabling efficient power management.
- Gate Threshold Voltage (Vgs(th)): Typically between 1-3V, allowing for low gate drive requirements.
- Package: Available in a TO-220 package, facilitating ease of heat dissipation and PCB mounting.
- Fast Switching: Designed for rapid turn-on and turn-off, making it suitable for high-frequency applications.
- Thermal Characteristics: Good thermal performance with a maximum junction temperature rating of 175°C.
These attributes make the IRF7313TRPBF ideal for applications such as power converters, motor controllers, and other power management systems.

Package

The IRF7313TRPBF is typically packaged in a DPAK (or TO-252) package type. This package features a surface-mount design, suitable for efficient thermal performance and space-saving on circuit boards.

Pinout

The IRF7313TRPBF is a dual N-channel MOSFET with a total of 8 pins. The pin configuration is as follows:
1. Gate 1: Control terminal for the first N-channel MOSFET.
2. Drain 1: Drain terminal for the first N-channel MOSFET.
3. Source 1: Source terminal for the first N-channel MOSFET.
4. Source 2: Source terminal for the second N-channel MOSFET.
5. Drain 2: Drain terminal for the second N-channel MOSFET.
6. Gate 2: Control terminal for the second N-channel MOSFET.
7. Gate 1 (N/C): Not connected.
8. Gate 2 (N/C): Not connected.
The device is designed for high-speed switching applications, including power management, motor control, and DC-DC converters. The IRF7313TRPBF features low on-resistance and fast switching times, making it suitable for various power electronic applications.

Manufacturer

The IRF7313TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, and industrial applications. The company is well-known for its innovation in power electronics, offering products such as MOSFETs, IGBTs, and integrated circuits that cater to various sectors, including automotive, industrial, and consumer electronics. Infineon aims to be a leader in providing technologies that promote energy efficiency and sustainability.

Application

The IRF7313TRPBF is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and switch-mode power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and renewable energy applications.

Equivalent

The IRF7313TRPBF is a dual N-channel MOSFET. Equivalent products include:
1. BSS123 (N-channel MOSFET, lower voltage)
2. IRF730 (single N-channel MOSFET, similar features)
3. SI7460 (dual N-channel MOSFET in a similar configuration)
Always verify specifications like voltage, current, and package type for compatibility before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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