IRF7301TR

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IRF7301TR

MOSFET 2N-CH 20V 5.2A 8SOP

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Spécifications

Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Vgs(th) (Max) @ Id 700mV @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Power - Max 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Rds On (Max) @ Id, Vgs 40mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V

Vue d'ensemble

Description

The IRF7301TR is an N-channel MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 60A, making it suitable for power management in various electronic circuits. The device is characterized by low on-resistance (R_DS(on)), which enhances its efficiency and reduces thermal dissipation during operation.
The IRF7301TR is commonly used in applications like DC-DC converters, motor drives, and power inverters due to its fast switching capabilities. It comes in a standard TO-220 package, which aids in effective heat dissipation and easy mounting on PCBs.
Additionally, the IRF7301TR is designed for compatibility with standard logic-level signals, enabling it to be driven directly by microcontrollers and other low-voltage devices. Its robust performance, combined with its low gate threshold voltage, makes it a popular choice among engineers for designing efficient power systems.

Features

The IRF7301TR is a high-voltage N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low to medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 50A, enabling it to manage high power loads.
3. On-Resistance: It exhibits low on-resistance (R_DS(on)), typically around 7.5 mΩ at V_GS = 10V, which reduces conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient driving with standard logic levels.
5. Packaging: Available in a TO-220 package, it facilitates effective thermal management.
6. Applications: Commonly used in switching power supplies, motor drives, and DC-DC converters.
Overall, the IRF7301TR is suited for high efficiency in a variety of power electronic applications.

Package

The IRF7301TR is packaged in a TO-220 form factor, which is a metal-can package suitable for high-power applications.

Pinout

The IRF7301TR is a dual N-channel MOSFET housed in a TO-220 package. It features a pin count of 3 pins for each MOSFET, totaling 6 pins in the package. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching; a voltage applied here turns the device on or off.
2. Drain (D): This is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This is where the current enters the MOSFET.
In a dual configuration, the first three pins correspond to one MOSFET, and the second set of three pins corresponds to the second MOSFET. The IRF7301TR is commonly used in applications like power management, motor control, and switching regulators due to its favorable electrical characteristics and efficiency.

Manufacturer

The IRF7301TR is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon serves various markets, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security in its product offerings.

Application

The IRF7301TR is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, motor control, and battery management systems. It is suitable for high-speed switching applications, including power amplifiers and power supply circuits. Its low R_DS(on) makes it ideal for energy-efficient designs in consumer electronics, automotive systems, and industrial automation.

Equivalent

The IRF7301TR is an N-channel MOSFET. Equivalent products include:
1. IRF7300
2. IRF7302
3. STP16NF06
4. BSS138
5. SIHFP30N06
Ensure to check specifications like voltage, current ratings, and R_DS(on) for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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