IRF7205TRPBF

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IRF7205TRPBF

MOSFET P-CH 30V 4.6A 8SO

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Spécifications

Series HEXFET®
Part Status Active
Base Product Number IRF7205
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 10 V
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The IRF7205TRPBF is an N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (R_DS(on)), which minimizes conduction losses, making it suitable for use in power supplies, motor controllers, and switching applications. With a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of up to 50A, it provides robust performance for various electronic circuits.
The device has a fast switching speed, enabling efficient operation at high frequencies. Its gate threshold voltage (V_GS(th)) allows for easy interfacing with standard logic levels. The IRF7205TRPBF is housed in a TO-220 package, allowing for effective heat dissipation.
Additionally, its Pb-free designation indicates compliance with environmental regulations, making it a suitable choice for modern electronic designs. Overall, the IRF7205TRPBF is widely used in industrial, automotive, and consumer applications requiring reliable power management solutions.

Features

The IRF7205TRPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) of up to 30A.
3. R_DS(on): Low on-resistance (R_DS(on)), typically around 8mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, suitable for various drive circuits.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching Speed: Suitable for high-frequency applications.
7. Robustness: Features like avalanche rating and a maximum junction temperature of 175°C contribute to reliability in demanding environments.
These characteristics make the IRF7205TRPBF ideal for power management, motor control, and other high-efficiency applications.

Package

The IRF7205TRPBF is packaged in a TO-220 form factor. This package type features a tab for mounting and excellent thermal performance, making it suitable for high-power applications.

Pinout

The IRF7205TRPBF is a N-channel MOSFET with a total of 5 pins.
Pin Count and Functions:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current flows into the MOSFET.
4. Body Diode - Internal to the MOSFET, allows current to flow from drain to source in the reverse direction.
5. Substrate - Typically connected to the source to minimize parasitic effects.
This MOSFET is designed for high-speed switching applications in power management and can handle significant voltage and current levels, providing efficient performance in various electronic circuits.

Manufacturer

The IRF7205TRPBF is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon specializes in semiconductor solutions that drive energy efficiency, mobility, and security. The company's product portfolio includes power semiconductors, microcontrollers, sensors, and automotive solutions, catering to various industries such as automotive, industrial, and consumer electronics. Infineon is known for its innovation and commitment to sustainability, focusing on developing technologies that enhance efficiency and reduce environmental impact.

Application

The IRF7205TRPBF is a N-channel MOSFET commonly used in various applications such as power management, DC-DC converters, motor control, and switching regulators. It is suitable for high-speed switching applications, enabling efficient power delivery in devices like computers, telecommunications equipment, and industrial automation systems. Its low on-resistance and high-speed capabilities make it ideal for enhancing energy efficiency in power electronics.

Equivalent

The IRF7205TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and BSS140. Always check the datasheets for specific parameters like voltage, current ratings, and package type to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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