IRF6811STRPBF

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IRF6811STRPBF

MOSFET N CH 25V 19A DIRECTFET

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Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 13 V
Power Dissipation (Max) 2.1W (Ta), 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SQ
Package / Case DirectFET™ Isometric SQ

Vue d'ensemble

Description

The IRF6811STRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features low on-resistance (R_DS(on)), allowing for minimal power loss during operation. With a voltage rating of 30V and a current handling capability of up to 62A, it is suitable for use in various applications, including power supplies, motor drivers, and switching circuits.
The device is housed in a TO-220 package, which facilitates efficient heat dissipation—crucial for high-power applications. Its fast switching speed makes it ideal for applications requiring rapid turn-on and turn-off cycles. The IRF6811STRPBF is also characterized by its ruggedness and reliability, contributing to its widespread use in the electronics industry.
Overall, the IRF6811STRPBF is a versatile component favored for its performance in power management solutions.

Features

The IRF6811STRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) is rated at 45A, making it suitable for power applications.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of approximately 0.025 ohms, which enhances efficiency by minimizing conduction losses.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive from low-voltage control circuits.
5. Fast Switching: It offers rapid switching speeds, which are beneficial for high-frequency applications.
6. Package Type: Available in a TO-220 package, it allows for effective heat dissipation.
7. Applications: Commonly used in DC-DC converters, motor control, and other power management systems.
Overall, the IRF6811STRPBF is suitable for applications requiring high efficiency and robustness in power switching.

Package

The IRF6811STRPBF is packaged in a TO-220 form factor, which is a type of metal-can package designed for power devices, providing efficient heat dissipation.

Pinout

The IRF6811STRPBF is a N-channel MOSFET with a pin count of 8. It is designed for high-speed switching applications and features low on-resistance and fast switching times.
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load; current flows from drain to source when the device is on.
3. Source (S): Connects to the ground or the negative side of the power supply.
4. Body Diode: Integrated structure that allows current to flow from source to drain in the reverse direction.
The device is commonly used in power management, motor control, and DC-DC converters. The IRF6811STRPBF is notable for its low gate threshold voltage, making it suitable for logic level applications.

Manufacturer

The manufacturer of the IRF6811STRPBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and production of semiconductor solutions for a wide range of applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, offering innovative technologies that enable energy efficiency, security, and connectivity in electronic devices. The company serves various sectors, including automotive, industrial automation, and the Internet of Things (IoT).

Application

The IRF6811STRPBF is a N-channel MOSFET used primarily in power management applications. Key application areas include DC-DC converters, power supplies, motor drivers, and load switching. Its high-efficiency switching capabilities make it suitable for renewable energy systems, electric vehicles, and battery management systems. Additionally, it can be used in industrial automation and consumer electronics for efficient power distribution.

Equivalent

The IRF6811STRPBF is a power MOSFET. Equivalent products include the IRF6811, FDB7045, STP55NF06, and AOD2N60. Always check specific ratings like Vds, Id, Rds(on), and package to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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