IRF6775MTRPBF

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IRF6775MTRPBF

MOSFET N-CH 150V 4.9A DIRECTFET

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 4.9A (Ta), 28A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 56mOhm @ 5.6A, 10V
Vgs(th)(Max)@Id 5V @ 100µA
GateCharge(Qg)(Max)@Vgs 36 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1411 pF @ 25 V
PowerDissipation(Max) 2.8W (Ta), 89W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DIRECTFET™ MZ

Vue d'ensemble

Description

The IRF6775MTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance, which minimizes conduction losses, making it suitable for use in DC-DC converters, power supplies, and motor control circuits. With a maximum drain-source voltage of 75V and a continuous drain current of 50A, it can handle substantial power levels, making it ideal for demanding applications.
The device is housed in a compact, surface-mount package (SO-8), which facilitates efficient thermal management and reduces PCB space. Its fast switching capabilities also enhance performance in high-frequency applications. The IRF6775MTRPBF is RoHS-compliant, ensuring it meets environmental regulations.
Overall, this MOSFET is an excellent choice for engineers seeking a reliable and efficient solution for power electronics in various applications.

Features

The IRF6775MTRPBF is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power circuits.
2. Current Rating: The continuous drain current (I_D) is rated at 40A, providing robust performance in demanding applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.022 ohms, minimizing conduction losses and enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for easy drive circuitry integration.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Suitable for high-frequency applications due to its rapid switching capabilities.
These features make the IRF6775MTRPBF ideal for use in power supplies, motor drives, and other high-performance applications requiring efficient and reliable semiconductor performance.

Package

The IRF6775MTRPBF is packaged in a TO-220 form factor. This package type is designed for efficient thermal management and is commonly used for power MOSFETs, providing good electrical performance and heat dissipation capabilities.

Pinout

The IRF6775MTRPBF is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This is the control terminal where the voltage is applied to turn the MOSFET on or off.
2. Drain (D): This terminal connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This terminal is connected to the ground or negative side of the circuit and serves as the return path for the current.
4. DRAIN (D): The second drain pin is present for better thermal dissipation and is typically connected to the same drain node.
5. Source (S): The second source pin is similarly available for improved thermal management, usually tied to the same source node.
The IRF6775MTRPBF is designed for high-speed switching applications and can handle high currents and voltages, making it suitable for power management in various electronic devices.

Manufacturer

The IRF6775MTRPBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon specializes in providing a wide range of electronic components and systems, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on innovations that enhance energy efficiency, connectivity, and security in electronic devices. Infineon is known for its commitment to sustainability and advancing technology for a better future.

Application

The IRF6775MTRPBF is an N-channel MOSFET used in various applications including power management, DC-DC converters, motor drivers, and switching power supplies. Its high efficiency and low on-resistance make it suitable for industrial and automotive applications, as well as in renewable energy systems such as solar inverters.

Equivalent

The IRF6775MTRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, BSS138, and AOD506. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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