IRF6727MTRPBF

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IRF6727MTRPBF

MOSFET N-CH 30V 32A DIRECTFET

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Spécifications

Series HEXFET®
Part Status Last Time Buy
Base Product Number IRF6727
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6190 pF @ 15 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package DirectFET™ Isometric MX
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The IRF6727MTRPBF is a n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, making it suitable for high-efficiency power management in various electronic devices.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 60A, and a gate threshold voltage (V_GS(th)) typically ranging from 2V to 4V. The device is packaged in a TO-220 format, facilitating easy heat dissipation.
The IRF6727MTRPBF is commonly used in power supplies, motor drivers, and other applications requiring reliable switching performance. It is also RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances. Overall, this MOSFET combines high performance with versatility, making it a popular choice for engineers in the design of modern electronic circuits.

Features

The IRF6727MTRPBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- Voltage Rating: 75 V, making it suitable for various high-voltage applications.
- Continuous Drain Current: Up to 30 A, allowing it to handle significant loads.
- RDS(on): Low on-resistance (typically 0.022 ohms at VGS = 10 V), which minimizes conduction losses and improves thermal performance.
- Gate Threshold Voltage (VGS(th)): Typically ranges from 2V to 4V, enabling efficient switching with low gate drive requirements.
- Power Dissipation: Capable of dissipating up to 94 W, which aids in thermal management.
- Package Type: Available in a TO-220 package, facilitating easy heat sinking and mounting.
These features make the IRF6727MTRPBF ideal for applications in power management, motor control, and automotive systems, ensuring reliability and performance in demanding conditions.

Package

The IRF6727MTRPBF is packaged in a TO-220 form factor.

Pinout

The IRF6727MTRPBF is a N-channel MOSFET commonly used in power management applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): This pin connects to the load; current flows from the drain when the MOSFET is turned on.
3. Source (S): This pin connects to ground or the negative side of the power supply; it serves as the return path for the current.
4. Tab (Heat Sink): The tab serves as a heat sink and can also be connected to the source for improved thermal management.
5. Body Diode: Although not a pin, the internal body diode facilitates current flow in the reverse direction when the MOSFET is off.
The IRF6727MTRPBF is designed for high efficiency and low on-resistance, making it suitable for various applications in switching power supplies and motor control.

Manufacturer

The IRF6727MTRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for a wide range of applications, including automotive, industrial, and consumer electronics. The company focuses on energy efficiency, mobility, and security solutions, and is recognized for its innovation in power management technologies, including MOSFETs, IGBTs, and microcontrollers. Infineon plays a significant role in the development of advanced technologies that contribute to sustainable and efficient energy use.

Application

The IRF6727MTRPBF is a N-channel MOSFET used in various applications such as power management, DC-DC converters, motor drives, and switching power supplies. It is suitable for high-speed switching, enabling efficient power conversion in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and high current handling capability make it ideal for applications requiring high efficiency and thermal performance.

Equivalent

The IRF6727MTRPBF is a N-channel MOSFET. Equivalent products include the AUIRF6727M, STP16NF06, and FQP30N06L. Always check specific parameters like RDS(on), VDS, VGS, and package type to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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