IRF6726MTRPBF

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IRF6726MTRPBF

MOSFET N-CH 30V 32A DIRECTFET

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Spécifications

Supplier Infineon Technologies,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series HEXFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 32A (Ta), 180A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.7mOhm @ 32A, 10V
Vgs(th)(Max)@Id 2.35V @ 150µA
GateCharge(Qg)(Max)@Vgs 77 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6140 pF @ 15 V
PowerDissipation(Max) 2.8W (Ta), 89W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DIRECTFET™ MT

Vue d'ensemble

Description

The IRF6726MTRPBF is an N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 84A, making it suitable for low-voltage power applications. With a low on-resistance (R_DS(on)) of approximately 0.015Ω at a gate voltage of 10V, it minimizes power losses during operation, enhancing overall efficiency. The device's fast switching speed allows for effective use in various applications, including power supplies, motor control, and DC-DC converters.
This MOSFET is housed in a TO-220 package, which provides excellent thermal performance and ease of heat dissipation. The IRF6726MTRPBF also has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, enabling operation with lower gate drive voltages. As a part of the IRF series, it is known for its reliability and robustness in demanding environments. The "MTRPBF" designation indicates that it is a surface-mount version that is lead-free and compliant with RoHS standards, making it suitable for modern electronic designs.

Features

The IRF6726MTRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of up to 100A.
3. On-Resistance: Low R_DS(on) typically around 0.016Ω, enhancing efficiency.
4. Gate Threshold Voltage: V_GS(th) between 2V to 4V, allowing for efficient driving with low gate voltage.
5. Fast Switching: Suitable for high-frequency applications, making it ideal for power management in various circuits.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for motor control, power supplies, and DC-DC converters.
Overall, the IRF6726MTRPBF is characterized by its robust performance in power applications, high efficiency, and reliability.

Package

The IRF6726MTRPBF is packaged in a TO-220 type, which is a metal package that provides good thermal performance and is suitable for power applications.

Pinout

The IRF6726MTRPBF is a N-channel MOSFET with a total of 8 pins. Its primary functions include high-efficiency switching and amplification in various applications. The device features a low on-resistance and is designed for high-speed switching applications, making it suitable for power management in DC-DC converters, motor drivers, and other power electronic systems.
The pin configuration typically includes:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The output terminal through which current flows.
3. Source (S) - The terminal connected to the ground or negative voltage.
Specific pin arrangements and additional functionalities can be found in the datasheet. Always consult the datasheet for detailed information, including electrical characteristics and absolute maximum ratings.

Manufacturer

The IRF6726MTRPBF is manufactured by Infineon Technologies. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor solutions, including power management, automotive electronics, and industrial applications. Infineon is recognized for its focus on innovation in areas such as energy efficiency, connectivity, and security. They serve diverse markets, including automotive, industrial, and consumer electronics, making them a key player in the global semiconductor industry.

Application

The IRF6726MTRPBF is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor control, and power supply circuits. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in automotive, industrial, and consumer electronics for efficient power handling and regulation.

Equivalent

The IRF6726MTRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and BTA16-600V. Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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