IRF6665TRPBF

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IRF6665TRPBF

IRF6665 - 12V-300V N-CHANNEL POW

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Spécifications

Supplier Rochester Electronics, LLC
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 4.2A (Ta), 19A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 62mOhm @ 5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 530 pF @ 25 V
PowerDissipation(Max) 2.2W (Ta), 42W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DIRECTFET™ SH

Vue d'ensemble

Description

The IRF6665TRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various high-efficiency switching applications. It features a low on-resistance (R_DS(on)), which reduces power losses and improves thermal performance. With a maximum drain-source voltage (V_DS) of 65V and a continuous drain current (I_D) of 32A, it is suitable for power management applications, including DC-DC converters and motor drives.
The device is packaged in a TO-220 or DPAK format, facilitating easy thermal management and integration into electronic circuits. Its fast switching speeds make it ideal for applications requiring rapid on-off cycling, such as power supplies and inverters. Overall, the IRF6665TRPBF is a reliable choice for engineers looking for a robust MOSFET to enhance the efficiency and performance of their power electronic designs.
For specific electrical characteristics and thermal limits, consulting the manufacturer's datasheet is recommended.

Features

The IRF6665TRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 65V, suitable for various power management applications.
2. Current Handling: Can handle continuous drain current (Id) up to 40A, which allows it to be used in high-performance power circuits.
3. RDS(on): It offers a low on-resistance (RDS(on)) of around 0.016 ohms, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is typically around 2-4V, enabling it to be driven by low-voltage logic levels.
5. Package: It comes in a TO-220 package, facilitating heat dissipation and easy mounting on PCB.
6. Fast Switching: Suitable for fast switching applications, enhancing efficiency in converter designs.
Overall, the IRF6665TRPBF is ideal for use in power supplies, motor drivers, and switching applications that require high efficiency and reliability.

Package

The IRF6665TRPBF is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFET applications.

Manufacturer

The manufacturer of the IRF6665TRPBF is Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in producing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company develops products such as power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and performance. Infineon is recognized for its innovation in the field of power management and is a key player in the semiconductor industry, contributing to advancements in technology and sustainability.

Application

The IRF6665TRPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power supplies. Its low on-resistance and high efficiency make it suitable for applications in electric vehicles, renewable energy systems, and consumer electronics. Additionally, it can be utilized in switching power supplies and load switching applications.

Equivalent

The IRF6665TRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and SI7456DP. Check specifications like Vds, Id, Rds(on), and package type to ensure compatibility in your application. Always verify with the manufacturer's datasheets for precise comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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