IRF6648TRPBF

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IRF6648TRPBF

MOSFET N-CH 60V 86A DIRECTFET MN

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Spécifications

Series HEXFET®
Part Status Active
Base Product Number IRF6648
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 25 V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MN
Package DirectFET™ Isometric MN
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The IRF6648TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) of approximately 10 mΩ at a gate voltage of 10V, which minimizes power loss during operation. With a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) rating of 60A, it is suitable for various applications, including DC-DC converters, motor control, and power supply circuits.
This MOSFET is packaged in a TO-220 configuration, allowing for efficient heat dissipation, making it ideal for applications where thermal performance is critical. The IRF6648TRPBF also includes a built-in body diode, enhancing its suitability for use in synchronous rectification. Its fast switching speeds enable high-frequency operation, contributing to overall system performance and efficiency.
As part of the RoHS-compliant series, it is environmentally friendly, making it a popular choice in modern electronic designs. Overall, the IRF6648TRPBF is valued for its reliable performance, thermal management capabilities, and versatility in power electronic applications.

Features

The IRF6648TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, with a pulsed drain current capability of 100A.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 6.5 mΩ, contributing to reduced conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with low-voltage logic.
5. Package: Housed in a TO-220 package, it provides efficient heat dissipation.
6. Fast Switching: The device features high-speed switching capabilities, making it ideal for applications such as DC-DC converters, motor drivers, and power inverters.
These characteristics make the IRF6648TRPBF suitable for high-performance power applications.

Package

The IRF6648TRPBF is typically packaged in a TO-220 case. This package type is designed for high-power applications, providing efficient thermal management and ease of mounting on heat sinks.

Pinout

The IRF6648TRPBF is an N-channel MOSFET with a total of 8 pins. It is designed for applications requiring efficient power switching.
Pin Functions:
1. Gate (G) - Controls the MOSFET's operation; applies voltage to turn the device on or off.
2. Drain (D) - The terminal through which current flows out of the MOSFET when it is on.
3. Source (S) - The terminal through which current enters the MOSFET when it is conducting.
The pin configuration typically follows the standard TO-220 package layout. The IRF6648TRPBF is rated for high voltage and current handling, making it suitable for power management in various electronic applications.
For detailed specifications, including maximum ratings and electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The manufacturer of the IRF6648TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing a wide range of semiconductor products, including power management solutions, automotive electronics, and microcontrollers. Infineon plays a significant role in various sectors such as automotive, industrial, and IoT (Internet of Things), providing innovative solutions that enhance energy efficiency and connectivity. They focus on high-performance and energy-efficient technologies, making them a key player in the semiconductor industry.

Application

The IRF6648TRPBF is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power inverters. It is suitable for high-speed switching applications due to its low on-resistance and fast switching capabilities. Common areas include renewable energy systems, electric vehicles, and industrial automation where efficient power control and thermal performance are essential.

Equivalent

The IRF6648TRPBF is a N-channel MOSFET. Equivalent products include:
1. STP14NM60 - STMicroelectronics
2. FQP30N06L - ON Semiconductor
3. BUK7Y10-55 - Nexperia
4. IRF3205 - Infineon
5. MTP10N60E - ON Semiconductor
Always verify specifications such as voltage, current, and package type to ensure compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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