IRF6635TRPBF

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IRF6635TRPBF

MOSFET N-CH 30V 32A DIRECTFET

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 32A (Ta), 180A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.8mOhm @ 32A, 10V
Vgs(th)(Max)@Id 2.35V @ 250µA
GateCharge(Qg)(Max)@Vgs 71 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5970 pF @ 15 V
PowerDissipation(Max) 2.8W (Ta), 89W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DIRECTFET™ MX

Vue d'ensemble

Description

The IRF6635TRPBF is an N-channel MOSFET designed for use in high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 70A, making it suitable for various power management applications, including DC-DC converters and motor drivers.
Key specifications include a low on-resistance (R_DS(on)) of approximately 0.0075 ohms, which helps reduce power losses during operation. This MOSFET is built on a robust structure that ensures high-speed switching capabilities and thermal performance, with a maximum gate threshold voltage (V_GS(th)) of 2-4V, allowing for easy drive with low-voltage logic.
The device is offered in a TO-220 package, which facilitates effective heat dissipation. Its compatibility with surface mount technology (SMT) allows for flexible PCB design. Overall, the IRF6635TRPBF is an efficient choice for various applications requiring reliable and high-performance switching capabilities.

Features

The IRF6635TRPBF is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
- Voltage Rating: 55V maximum drain-source voltage (Vds).
- Continuous Drain Current: Up to 36A, allowing robust performance in high-power applications.
- RDS(on): Low on-resistance (typically around 9.5 mΩ at 10V Vgs), which minimizes conduction losses and enhances efficiency.
- Gate Threshold Voltage (Vgs): Low threshold, enabling effective switching at lower gate voltages.
- Package Type: Available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
- Fast Switching Speed: Suitable for high-frequency applications, improving overall system efficiency.
- Applications: Ideal for use in DC-DC converters, industrial motor drives, and other power management circuits.
Overall, the IRF6635TRPBF combines high performance with versatility, making it suitable for various demanding power applications.

Package

The IRF6635TRPBF is packaged in a TO-220 form factor. This package type provides good thermal performance and is commonly used for power MOSFET applications.

Pinout

The IRF6635TRPBF is a N-channel MOSFET with a TO-220 package that typically has three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the MOSFET on (conducting state) or off (non-conducting state).

2. Drain (D): This is the pin through which the output current flows when the MOSFET is in the on state. It connects to the load.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It is the reference point for the gate voltage.
The IRF6635TRPBF features a low R_DS(on) for efficient operation in high-power applications, making it suitable for switching and amplifying signals in various electronic applications.

Manufacturer

The IRF6635TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on innovative technologies that enable efficiency and sustainability, particularly in power management and energy efficiency applications. Infineon is known for its expertise in power MOSFETs, which are widely used in power conversion, motor control, and other electronic applications.

Application

The IRF6635TRPBF is an N-channel MOSFET designed for various applications, including power management in DC-DC converters, motor drives, and switching power supplies. It is also suitable for use in automotive applications, including electric vehicle (EV) systems, as well as in consumer electronics and industrial equipment for efficient power switching and amplification. Its features include low on-resistance and high-speed switching.

Equivalent

The IRF6635TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FDPF16N06, and IXFH16N06. These alternatives feature similar voltage and current ratings, but it's important to verify specific parameters such as RDS(on), gate charge, and package type for compatibility with your application. Always consult the datasheets before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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