IRF6614TRPBF

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IRF6614TRPBF

IRF6614 - 12V-300V N-CHANNEL POW

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  • Mfr. Partie #IRF6614TRPBF
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Spécifications

Supplier Rochester Electronics, LLC
Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 12.7A (Ta), 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 8.3mOhm @ 12.7A, 10V
Vgs(th)(Max)@Id 2.25V @ 250µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2560 pF @ 20 V
PowerDissipation(Max) 2.1W (Ta), 42W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DIRECTFET™ ST

Vue d'ensemble

Description

The IRF6614TRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance (R_DS(on)), which enhances efficiency in power management circuits, making it suitable for use in DC-DC converters, motor drivers, and power amplifiers.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 14A, and a gate threshold voltage (V_GS(th)) typically around 2-4V. This MOSFET is housed in a TO-220 package, which allows for effective heat dissipation.
The IRF6614TRPBF is particularly valued in applications where low power losses and thermal management are crucial. Its fast switching capabilities and robust construction make it a reliable choice for both consumer electronics and industrial applications.
Overall, the IRF6614TRPBF is a versatile component in modern electronic designs, offering efficiency and performance in power control scenarios.

Features

The IRF6614TRPBF is an N-channel MOSFET designed for high-efficiency applications. Its key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) of 26A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance (~0.06 ohms at V_GS = 10V), which minimizes conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 1V to 2.5V, enabling easy interfacing with low-voltage logic.
5. Package Type: Available in TO-220 and other packages, facilitating heat dissipation.
6. Fast Switching: Suitable for applications requiring rapid switching, such as in power supplies and motor drives.
7. RoHS Compliant: Meets environmental regulations, ensuring safer disposal and usage.
These characteristics make the IRF6614TRPBF ideal for use in power management, DC-DC converters, and other demanding electronic applications.

Package

The IRF6614TRPBF is packaged in a TO-220 configuration. This package type is known for its robust thermal performance and is commonly used for power MOSFETs in various applications.

Pinout

The IRF6614TRPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): Controls the device's switching and is used to turn the MOSFET on or off.
2. Drain (D): The output terminal where current flows out when the device is on.
3. Source (S): The terminal through which current enters the device when it is on.
The IRF6614TRPBF is designed for high-efficiency power switching applications, with features that include low on-resistance and fast switching speeds. It is commonly used in power supply circuits, motor drivers, and other applications requiring efficient control of high power.

Manufacturer

The IRF6614TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in products for various sectors, including automotive, industrial power control, and security technologies. The company focuses on providing solutions for energy efficiency, mobility, and the Internet of Things (IoT). Infineon is known for its innovations in power semiconductors, microcontrollers, and sensor technologies, catering to a wide range of applications in the electronics industry.

Application

The IRF6614TRPBF is a N-channel MOSFET used in various applications, including power management circuits, DC-DC converters, motor control, and switch-mode power supplies. Its high efficiency and fast switching capabilities make it suitable for automotive, industrial electronics, and renewable energy systems. Additionally, it can be employed in load switching and high-frequency applications due to its robust performance.

Equivalent

The IRF6614TRPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, FQD16N06L, and BUK7Y1R0-40. Ensure compatibility in voltage, current rating, and RDS(on) when selecting alternatives. Always check specifications to confirm suitability for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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