IRF640NSTRLPBF

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IRF640NSTRLPBF

HEXFET POWER MOSFET

  • Fabricant
  • Mfr. Partie #IRF640NSTRLPBF
  • Paquet TO-263-3
  • Fiche de données
  • En stock6260

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Spécifications

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 150mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 67 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 25 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Vue d'ensemble

Description

The IRF640NSTRLPBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 9A at a temperature of 25°C. The device is known for its low on-state resistance (Rds(on)), typically around 0.18 ohms, which enhances its efficiency and reduces power losses during operation.
The IRF640NSTRLPBF is commonly used in power management, motor control, and audio amplification applications. Its ability to handle high voltages and currents makes it suitable for various industrial and consumer applications. The package type, typically a TO-220 or similar, facilitates easy mounting on heat sinks for effective thermal management.
Being RoHS-compliant, it adheres to environmental standards, making it suitable for modern electronic designs. Overall, the IRF640NSTRLPBF is a reliable choice for engineers looking for a robust MOSFET for their switching needs.

Features

The IRF640NSTRLPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Max V_DS of 200V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) up to 9.2A at 25°C, allowing for significant load handling.
3. R_DS(on): Low on-resistance of about 0.18 ohms at V_GS = 10V, improving efficiency and reducing heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2 to 4V, enabling compatibility with low-voltage gate drive circuits.
5. Package: Available in TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for rapid switching speeds, making it ideal for PWM applications.
7. Safe Operating Area: Provides a robust SOA for reliable operation.
These features make the IRF640NSTRLPBF a popular choice in power supply designs, motor control, and other electronic applications requiring efficient switching capabilities.

Package

The IRF640NSTRLPBF is packaged in a TO-220 form factor. This package type is designed for power MOSFETs, providing effective heat dissipation and ease of mounting on heatsinks.

Pinout

The IRF640NSTRLPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate relative to the source turns the device on or off.

2. Drain (D): This pin is the output of the MOSFET where the load is connected. The current flows from drain to source when the device is on.
3. Source (S): This pin is the reference point for the gate voltage and where the current exits the device. It is usually connected to ground or a lower potential in typical applications.
The IRF640NSTRLPBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power management and control in various electronic circuits.

Manufacturer

The IRF640NSTRLPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer that specializes in automotive, industrial power control, and security technologies. The company designs and produces a wide range of semiconductor solutions, including power transistors, microcontrollers, and sensors, catering to various industries such as automotive, industrial automation, and consumer electronics. Infineon is recognized for its innovation in power management and energy efficiency, contributing to advancements in sustainable technologies.

Application

The IRF640NSTRLPBF is an N-channel MOSFET commonly used in applications such as power switching, motor control, and power management in electronic devices. It is suitable for high-efficiency power supplies, DC-DC converters, and automotive applications due to its low on-resistance and fast switching capabilities. Additionally, it is often found in inverter circuits and as a relay driver in various electronic systems.

Equivalent

The IRF640NSTRLPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and MTP50N06. Always check the specifications for V_DS, I_D, R_DS(on), and other parameters to ensure compatibility in your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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