IRF640NPBF

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IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 150mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 67 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1160 pF @ 25 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF640NPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 9.2A, making it suitable for use in power supplies, motor drivers, and other high-voltage applications.
Key specifications include a low on-resistance (R_DS(on)) of around 0.18 ohms, which minimizes power loss during operation. The IRF640NPBF is also characterized by fast switching speeds, enabling efficient operation in pulse-width modulation (PWM) applications.
Additionally, it comes in a TO-220 package, which allows for effective heat dissipation, and is RoHS compliant, ensuring it meets environmental standards. The device's gate threshold voltage (V_GS(th)) typically ranges from 2-4V, making it compatible with standard logic levels for easier integration into various electronic circuits. Overall, the IRF640NPBF is a reliable choice for engineers seeking efficient and robust MOSFET solutions.

Features

The IRF640NPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: Drain-source voltage (V_DS) up to 200V, making it suitable for high-voltage applications.
- Current Rating: Continuous drain current (I_D) of 9.2A at 25°C, allowing it to handle significant loads.
- R_DS(on): Low on-resistance (typically 0.18Ω at V_GS = 10V), which minimizes power losses during operation.
- Gate Threshold Voltage: V_GS(th) between 2V to 4V, enabling efficient switching with low gate drive requirements.
- Fast Switching Speed: Quick turn-on and turn-off times, enhancing performance in high-frequency circuits.
- Package Type: Available in TO-220 and other packages for easy heat dissipation and mounting.
These features make the IRF640NPBF ideal for applications in power supplies, motor control, and other electronic circuits requiring efficient and reliable switching.

Package

The IRF640NPBF is typically available in a TO-220 package type, which is a metal-tabbed, three-lead package designed for power applications. This package provides good thermal performance and is commonly used for MOSFETs in high-power switching applications.

Pinout

The IRF640NPBF is an N-channel power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied here relative to the source pin turns the device on, allowing current to flow between the drain and source.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to ground (or the negative side of the power supply). It serves as the return path for the current flowing from the drain when the MOSFET is conducting.
The IRF640NPBF is designed for high-speed switching applications and can handle high voltages and currents, typically used in power management and motor control circuits.

Manufacturer

The IRF640NPBF is manufactured by Infineon Technologies AG, a leading global company in the field of semiconductor solutions. Infineon specializes in providing a wide range of products, including power semiconductors, microcontrollers, and sensors, with applications in automotive, industrial, and consumer electronics sectors. The company is known for its focus on innovation and energy efficiency, contributing significantly to the development of technologies that enhance performance while reducing energy consumption. Infineon operates worldwide and is recognized for its commitment to quality and reliability in its semiconductor products.

Application

The IRF640NPBF is an N-channel MOSFET primarily used in power management applications. Its key areas include motor control, DC-DC converters, switching power supplies, and automotive applications. It is also utilized in high-speed switching applications due to its low on-resistance and fast switching capabilities, making it suitable for efficient power handling in various electronic circuits.

Equivalent

Equivalent products to the IRF640NPBF include the IRF840, IRF320, STP16NF06, and FQP30N06L. These MOSFETs are suitable alternatives, but always verify specifications such as voltage, current ratings, and R_DS(on) to ensure compatibility with your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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