IRF640

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IRF640

MOSFET N-CH 200V 18A TO220AB

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Spécifications

Package Tube
Series MESH OVERLAY™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 180mOhm @ 9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 72 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1560 pF @ 25 V
PowerDissipation(Max) 125W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Vue d'ensemble

Description

The IRF640 is an N-channel power MOSFET designed for high-speed switching applications. It has a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 9A at a junction temperature of 25°C. With a low on-resistance (R_DS(on)) of around 0.18 ohms, it demonstrates efficient performance, minimizing power loss when in the 'on' state.
Operating with a gate threshold voltage (V_GS(th)) of 2-4V, the IRF640 is suitable for various applications, including motor control, power supplies, and amplifiers. It can be driven with standard logic level signals, making it compatible with microcontrollers and other digital circuits.
The device is housed in a TO-220 package, which facilitates effective heat dissipation. Its robust design and reliable characteristics make the IRF640 a popular choice in electronic circuits requiring efficient and high-voltage switching capabilities.

Features

The IRF640 is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, allowing for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 9.2A at 25°C.
3. On-Resistance: The R_DS(on) is approximately 0.18 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling compatibility with low-voltage control circuits.
5. Fast Switching: The device features fast switching capabilities, making it suitable for high-frequency applications.
6. Package: Available in a TO-220 package, which aids in heat dissipation.
7. Temperature Range: Operates effectively in a temperature range from -55°C to +170°C.
These attributes make the IRF640 suitable for applications in power supplies, motor control, and other switching devices.

Package

The IRF640 is typically packaged in a TO-220 case, which is a standard package for power MOSFETs. It features three terminals: gate, drain, and source, allowing for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The IRF640 is an N-channel power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This is the control terminal. A voltage applied to the gate relative to the source controls the MOSFET's conductive state (on/off).
2. Drain (D): This is the terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This terminal is connected to the ground or the negative side of the circuit. Current flows from the source to the drain when the MOSFET is conducting.
The IRF640 is commonly used in switching applications, power management, and as an electronic switch due to its high efficiency and fast switching capabilities. Its maximum voltage rating is 200V, and it can handle a continuous current of up to 9.2A at a temperature of 25°C.

Manufacturer

The IRF640 is manufactured by Infineon Technologies AG, a leading global semiconductor company. Infineon specializes in designing and producing a wide range of semiconductor and system solutions for various industries, including automotive, industrial power control, and consumer electronics. The company focuses on innovation and technology development to enhance energy efficiency, safety, and connectivity in its products. Infineon is known for its expertise in power semiconductors, including MOSFETs like the IRF640, which are used in various applications such as power supplies and motor control due to their efficiency and reliability.

Application

The IRF640 is an N-channel MOSFET widely used in power electronics applications such as switching power supplies, motor control, and high-speed switching. Its applications include DC-DC converters, amplifiers, and inverters for renewable energy systems. Additionally, it is suitable for audio amplifiers and electronic circuits requiring high-efficiency switching and low on-resistance.

Equivalent

Equivalent products to the IRF640 MOSFET include the IRF840, STP16NF06, and FQP30N06L. These alternatives have similar specifications in terms of voltage and current ratings, but always verify datasheets for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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