IRF630PBF

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IRF630PBF

MOSFET N-CH 200V 9A TO220AB

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF630

Vue d'ensemble

Description

The IRF630PBF is an N-channel power MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 555V and a continuous drain current (I_D) of 9.2A at 25°C. The device is characterized by low on-resistance (R_DS(on)) of approximately 0.4 ohms, ensuring efficient conduction and minimizing power loss.
It is commonly used in applications such as power supplies, motor controllers, and other circuits requiring high voltage and current handling. The IRF630PBF is housed in a TO-220 package, making it suitable for heat dissipation and easy mounting on heat sinks.
The "PBF" suffix indicates that it is lead-free, aligning with RoHS compliance for environmental safety. Key parameters of the IRF630PBF include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) of around 40 nC, which facilitates efficient drive requirements. Overall, the IRF630PBF is a reliable choice for various electronic applications requiring robust performance in high-voltage environments.

Features

The IRF630PBF is an N-channel power MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-to-source voltage (VDS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (ID) of 9.2A at 25°C, allowing for significant load handling.
3. Gate Threshold Voltage: VGS(th) ranges from 2V to 4V, enabling compatibility with low-voltage control signals.
4. RDS(on): Low on-resistance (typically around 0.4 ohms at VGS = 10V), which minimizes power loss during operation.
5. Switching Speed: Fast switching capabilities, ideal for applications like power supplies and motor control.
6. Package Type: Available in TO-220 and other packages, facilitating easy heat dissipation and mounting.
This device is commonly used in applications such as converters, inverters, and electronic ballast designs due to its robust performance characteristics.

Package

The IRF630PBF is typically packaged in a TO-220 style package, which features a metal tab for heat dissipation and is designed for easy mounting to a heatsink. This package type is commonly used for power MOSFETs in various applications.

Pinout

The IRF630PBF is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This terminal controls the MOSFET. A voltage applied to the gate relative to the source turns the transistor on or off.

2. Drain (D): This terminal is where the current flows out of the MOSFET to the load. It connects to the high-voltage side of the circuit.

3. Source (S): This is the terminal from which the current enters the MOSFET. It typically connects to ground in low-side switching applications.
The IRF630PBF is commonly used in power switching applications due to its ability to handle high voltage (up to 500V) and current (up to 9.2A), making it suitable for use in motor drivers, power supplies, and inverters. It features a low on-resistance, which helps in minimizing power losses in switching applications.

Manufacturer

The IRF630PBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovative technologies in power semiconductors and has a strong focus on energy efficiency and automotive applications. Infineon is headquartered in Neubiberg, Germany, and operates worldwide, serving various sectors such as automotive, industrial automation, and consumer electronics.

Application

The IRF630PBF is a N-channel MOSFET commonly used in various applications, including power management, switching power supplies, motor control, and audio amplifiers. It is suitable for high-speed switching applications due to its low on-resistance and high voltage capability. Additionally, it can be used in projects involving automotive electronics, LED drivers, and DC-DC converters.

Equivalent

Equivalent products to the IRF630PBF include the IRF530, IRF640, and IRF740. These MOSFETs have similar voltage and current ratings, but be sure to check specific parameters such as RDS(on), gate threshold voltage, and package types for compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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