IRF5852TRPBF

Les images sont à titre de référence seulement

IRF5852TRPBF

MOSFET 2N-CH 20V 2.7A 6-TSOP

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Obsolete
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 2.7A
RdsOn(Max)@IdVgs 90mOhm @ 2.7A, 4.5V
Vgs(th)(Max)@Id 1.25V @ 250µA
GateCharge(Qg)(Max)@Vgs 6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 400pF @ 15V
Power-Max 960mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Vue d'ensemble

Description

The IRF5852TRPBF is a high-performance N-channel MOSFET designed for various applications, including power management and switching in electronic devices. It features a low on-resistance (RDS(on)) which minimizes power loss and enhances efficiency, making it suitable for high-speed switching applications. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 42A, it can handle substantial power loads.
The device is packaged in a TO-220 form factor, allowing for effective heat dissipation. Its gate threshold voltage (VGS(th)) ranges from 2V to 4V, making it compatible with standard logic levels. The IRF5852TRPBF is also RoHS compliant, indicating it meets environmental standards by eliminating hazardous substances.
Applications include use in power supplies, motor drives, and inverters. Its robustness and efficiency make it a popular choice among engineers for designing reliable and energy-efficient electronic systems.

Features

The IRF5852TRPBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, allowing it to manage significant load currents.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.018 ohms at V_GS = 10V, which minimizes power loss and improves thermal performance.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, facilitating operation with lower gate drive voltages.
5. Package: Offered in a TO-220 package, it provides good heat dissipation and is suitable for a variety of mounting options.
6. Fast Switching: The MOSFET is designed for fast switching applications, ideal for DC-DC converters, motor control, and power management systems.
These features make the IRF5852TRPBF a popular choice in power electronics applications.

Package

The IRF5852TRPBF is packaged in a TO-220 form factor. This package type provides efficient thermal performance and is suitable for high-power applications.

Pinout

The IRF5852TRPBF is an N-channel MOSFET with a total of 8 pins. Its key functions include:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The terminal through which the current exits the MOSFET when it is in the on state.
3. Source (S): The terminal through which the current enters when the device is on.
The typical applications for this MOSFET include power management, motor control, and other switching applications. The IRF5852TRPBF features a low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency designs.
For specific pin configurations, please refer to the datasheet for the exact layout and additional features.

Manufacturer

The IRF5852TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in developing a wide range of semiconductor solutions for various applications, including automotive, industrial, and power management. The company focuses on providing high-performance components such as power MOSFETs, microcontrollers, and sensors, contributing to innovations in energy efficiency, mobility, and connectivity. Infineon is recognized for its commitment to sustainability and advancing technology to support the growing demands of the electronic and automotive industries.

Application

The IRF5852TRPBF is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, motor control, and switching power supplies. Its high efficiency and fast switching capabilities make it suitable for low-voltage applications, such as in consumer electronics, automotive systems, and renewable energy systems.

Equivalent

The IRF5852TRPBF is a N-channel MOSFET. Equivalent products include the BSS138, IRF540, IRF3205, and the STP16NF06. Always check the specific electrical characteristics, package type, and ratings to ensure compatibility with your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire