IRF5851TRPBF

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IRF5851TRPBF

MOSFET N/P-CH 20V 2.7A 6-TSOP

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Obsolete
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 2.7A, 2.2A
RdsOn(Max)@IdVgs 90mOhm @ 2.7A, 4.5V
Vgs(th)(Max)@Id 1.25V @ 250µA
GateCharge(Qg)(Max)@Vgs 6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 400pF @ 15V
Power-Max 960mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Vue d'ensemble

Description

The IRF5851TRPBF is a N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance (RDS(on)) and fast switching speeds, making it suitable for both automotive and industrial applications. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 30A, this MOSFET can handle significant power loads.
The device is housed in a TO-220 package, which facilitates effective heat dissipation, and is fully RoHS compliant, making it environmentally friendly. Its characteristics include a low gate threshold voltage and high transconductance, ensuring efficient operation in both linear and saturation regions.
Common applications include DC-DC converters, motor control, and power management systems. The IRF5851TRPBF is particularly valued for its reliability and performance in demanding environments.

Features

The IRF5851TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 80A, allowing it to handle substantial loads.
3. Low R_DS(on): The device offers a low on-resistance (R_DS(on)) typically around 6.5 mΩ at V_GS = 10V, resulting in decreased power loss.
4. Fast Switching: It exhibits fast switching speeds, making it ideal for switching power supplies and DC-DC converters.
5. Thermal Performance: Featuring a TO-220 package, it has good thermal management, enhancing reliability under high loads.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy interfacing with logic-level control circuits.
These characteristics make the IRF5851TRPBF suitable for applications such as motor control, power management, and power conversion.

Package

The IRF5851TRPBF is packaged in a SO-8 (Small Outline 8) surface mount package.

Pinout

The IRF5851TRPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor) with a total of 8 pins. It is a part of the N-channel MOSFET family and is typically used in power management applications.
The pin functions are as follows:
1. Gate (G) - Pin 1: Controls the switching of the MOSFET.
2. Drain (D) - Pin 2: The terminal through which current flows out when the MOSFET is on.
3. Source (S) - Pin 3: The terminal through which current flows into the MOSFET when it is on.
4. N/C - Pin 4: No connection, not used.
5. N/C - Pin 5: No connection, not used.
6. N/C - Pin 6: No connection, not used.
7. N/C - Pin 7: No connection, not used.
8. N/C - Pin 8: No connection, not used.
The IRF5851TRPBF is commonly found in applications such as DC-DC converters and motor control systems.

Manufacturer

The manufacturer of the IRF5851TRPBF is Infineon Technologies. Infineon is a global semiconductor company that specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. Founded in 1999, Infineon is headquartered in Neubiberg, Germany, and is known for its focus on innovation, efficiency, and sustainability in electronic components. The company serves various markets, including automotive, industrial, and consumer electronics, providing critical components that enhance performance and energy efficiency in electronic devices.

Application

The IRF5851TRPBF is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor control, and load switching. Its high efficiency and fast switching capabilities make it suitable for battery-powered devices, power supplies, and industrial applications. Additionally, it can be used in audio amplifiers and power inverters for renewable energy systems.

Equivalent

The IRF5851TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP16N06, and AUIRF5851. Always verify specifications such as voltage, current ratings, and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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