IRF5803TRPBF

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IRF5803TRPBF

MOSFET P-CH 40V 3.4A MICRO6

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Spécifications

Series HEXFET®
Part Status Obsolete
Base Product Number IRF5803
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro6™(TSOP-6)
Package SOT-23-6 Thin, TSOT-23-6
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The IRF5803TRPBF is an N-channel MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 55V, a continuous drain current (I_D) of 100A, and a low on-resistance (R_DS(on)) of approximately 0.042 ohms, facilitating efficient power delivery and minimal heat generation. This component is suitable for use in power management systems, motor drivers, and other applications where efficient switching is crucial.
The IRF5803TRPBF comes in a TO-220 package, which allows for effective thermal dissipation. It is also RoHS compliant, ensuring that it meets environmental regulations. The device can be driven directly by standard logic levels, making it compatible with a variety of control systems.
Overall, the IRF5803TRPBF is an ideal choice for designers needing reliable performance in power electronic circuits, offering robustness and efficiency in a compact form factor.

Features

The IRF5803TRPBF is an N-channel MOSFET designed for various power applications. Key features include:
- Voltage Rating: Max drain-source voltage (V_DS) of 60V.
- Current Rating: Continuous drain current (I_D) up to 90A, suitable for high-power applications.
- R_DS(on): Low on-resistance (approximately 0.025 ohms at V_GS = 10V), enhancing efficiency by reducing power loss.
- Fast Switching: High-speed switching capabilities make it ideal for applications like DC-DC converters and motor drivers.
- Thermal Performance: Can handle high temperatures (up to 175°C), with adequate thermal management.
- Package: Available in TO-220 package, facilitating easy heat dissipation and integration into various circuits.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2 to 4V, allowing for simple drive requirements.
These features make the IRF5803TRPBF suitable for automotive, industrial, and consumer electronics applications.

Package

The IRF5803TRPBF is packaged in a TO-220 form factor. This package type is commonly used for high-power MOSFETs and provides efficient heat dissipation due to its larger surface area, making it suitable for applications requiring robust thermal management.

Pinout

The IRF5803TRPBF is a dual N-channel MOSFET in a TO-220 package. It features 5 pins.
Pin Count and Function:
1. Gate 1 (G1): Controls the first MOSFET (Q1).
2. Drain 1 (D1): The drain terminal for the first MOSFET (Q1).
3. Source 1 (S1): The source terminal for the first MOSFET (Q1).
4. Gate 2 (G2): Controls the second MOSFET (Q2).
5. Drain 2 (D2): The drain terminal for the second MOSFET (Q2).
6. Source 2 (S2): The source terminal for the second MOSFET (Q2).
It is commonly used in applications requiring high-speed switching and efficiency, such as power management and motor control. The IRF5803TRPBF is known for its low on-resistance and high current capacity.

Manufacturer

The IRF5803TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in the development and production of semiconductors and system solutions for various applications, including automotive, industrial, and Internet of Things (IoT) markets. The company focuses on power management, automotive electronics, and security technologies, providing innovative solutions that enable efficient energy use and connectivity in electronic systems.

Application

The IRF5803TRPBF is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency power conversion and energy-saving solutions in automotive, industrial, and consumer electronics.

Equivalent

The IRF5803TRPBF is a N-channel MOSFET. Equivalent products include:
1. STP16NF06
2. FQP30N06L
3. BSS138
4. AOD-6-30
5. IRF3205
Always verify specifications such as voltage, current ratings, and RDS(on) before substitution.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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