IRF540

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IRF540

MOSFET N-CH 100V 28A TO220AB

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  • Mfr. Partie #IRF540
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  • En stock3717

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Spécifications

Part Status Obsolete
Base Product Number IRF540
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package TO-220-3
Packaging Tube

Vue d'ensemble

Description

The IRF540 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in various electronic applications, including power switching and amplification. It features a voltage rating of 100V, a continuous drain current of up to 33A, and a low on-resistance (R_ds(on)) of approximately 0.044 ohms, making it efficient for high-power applications.
Key characteristics include a gate threshold voltage of 2-4V, allowing it to be driven by lower voltage logic levels. The IRF540 is suitable for use in switching power supplies, motor controllers, and amplifier circuits. Its robust package (typically TO-220) allows for effective heat dissipation.
When utilizing the IRF540, proper gate drive and thermal management are essential to ensure reliable operation and prevent overheating. Overall, the IRF540 is a versatile component ideal for engineers and hobbyists looking to control high currents and voltages in their projects.

Features

The IRF540 is an N-channel MOSFET widely used in power switching applications. Key features include:
1. V_DS (Drain-Source Voltage): Maximum of 100V, making it suitable for high-voltage applications.
2. I_D (Continuous Drain Current): Rated at 33A, allowing it to handle significant current loads.
3. R_DS(on) (On-Resistance): Approximately 0.044 ohms at V_GS = 10V, ensuring low power dissipation when fully turned on.
4. V_GS(th) (Gate-Source Threshold Voltage): Ranges from 2V to 4V, enabling compatibility with low voltage gate drive circuits.
5. Package Type: Available in TO-220, DPAK, and other packages, facilitating versatile mounting options.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency.
7. Thermal Characteristics: Equipped with a high power dissipation capability, suitable for heatsinking.
These features make the IRF540 ideal for applications in motor control, power supplies, and audio amplifiers.

Package

The IRF540 is commonly available in a TO-220 package type. This package features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The IRF540 is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected. It allows current to flow from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground (or a negative voltage) in typical applications. It serves as the return path for current flowing through the MOSFET.
The IRF540 operates efficiently in switching applications and is used in various power management and control circuits.

Manufacturer

The IRF540 is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company serves various industries, including automotive, industrial, and communication sectors, focusing on high-performance power transistors, microcontrollers, and sensors. Infineon is recognized for its innovation in semiconductor technology, contributing to energy efficiency and advanced electronic applications.

Application

The IRF540 is a power MOSFET widely used in various applications, including motor control, power supplies, DC-DC converters, and switching regulators. Its high voltage and current ratings make it suitable for applications in automotive electronics, industrial equipment, and solar inverters. Additionally, it is often used in audio amplifiers and RF amplifiers for signal amplification.

Equivalent

Equivalent products to the IRF540 include the IRF540N, STP40NF06, FQP50N06, and BSS140. These MOSFETs have similar specifications, including voltage and current ratings, but always check the datasheets for exact parameters to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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