IRF5305PBF

Les images sont à titre de référence seulement

IRF5305PBF

MOSFET P-CH 55V 31A TO220AB

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1200 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF5305PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a low on-resistance (RDS(on)) of approximately 0.045 ohms, allowing it to efficiently handle high currents with minimal power loss. This MOSFET can withstand a maximum drain-source voltage (VDS) of 55V and has a continuous drain current (ID) rating of up to 40A, making it suitable for various applications in power electronics, including DC-DC converters, motor drivers, and power supplies.
The IRF5305PBF is housed in a TO-220 package, facilitating heat dissipation and making it easy to mount on heatsinks. Its fast switching capabilities enable efficient operation in high-frequency applications. Additionally, it is RoHS compliant, indicating it is free from hazardous substances. Overall, the IRF5305PBF is a reliable choice for engineers seeking robust performance in their electronic designs.

Features

The IRF5305PBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for a variety of high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 40A, allowing it to drive heavy loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.15 ohms (at V_GS = 10V), which reduces power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, allowing for efficient switching at lower gate voltages.
5. Power Dissipation: With a maximum power dissipation of 94W, it can handle significant thermal loads.
6. Package: Typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the IRF5305PBF ideal for applications in switch-mode power supplies, DC-DC converters, and motor control systems.

Package

The IRF5305PBF is packaged in a TO-220 format. This package type is designed for high-power applications, providing good thermal performance and ease of heat dissipation.

Pinout

The IRF5305PBF is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): This is the terminal through which the primary current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): The source pin is the terminal through which the current exits the MOSFET to the load.
The IRF5305PBF is designed for high-voltage and high-current applications, making it suitable for various power management and switching applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 49A.

Manufacturer

The IRF5305PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation and commitment to providing high-performance semiconductor products that enhance energy efficiency and reliability in various electronic systems. Infineon operates in multiple sectors, focusing on sustainability and advanced technology development.

Application

The IRF5305PBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and power switching. It is suitable for high-efficiency power supplies, inverters, and load switching in automotive and industrial systems. Its features make it ideal for applications requiring high voltage and current handling, such as renewable energy systems and battery management.

Equivalent

The IRF5305PBF is an N-channel MOSFET. Equivalent products include:
1. IRF5305
2. STP16NF06
3. FQP30N06L
4. STP30NF06
5. AUIRFB5305
Check the specifications for gate threshold voltage, RDS(on), and current ratings to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire