IRF5210PBF

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IRF5210PBF

MOSFET P-CH 100V 40A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 24A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 180 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2700 pF @ 25 V
PowerDissipation(Max) 200W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF5210PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance (RDS(on)) of approximately 0.045 ohms, which minimizes power loss and heat generation during operation. With a maximum drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) capability of up to 75A, it is suitable for various applications, including power management, motor control, and DC-DC converters.
The device has a fast switching speed, making it ideal for high-frequency applications. It comes in a TO-220 package, providing effective thermal dissipation and ease of mounting. The IRF5210PBF is also RoHS-compliant, indicating it meets environmental standards for hazardous substances. Overall, it is a robust choice for engineers looking to enhance the efficiency and reliability of their electronic designs.

Features

The IRF5210PBF is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (ID) of up to 80A, allowing it to manage high power loads.
3. Low On-Resistance: The typical on-resistance (RDS(on)) is around 0.04 ohms at 10V gate voltage, which helps minimize power loss and heat generation.
4. Fast Switching Speed: The device features fast switching capabilities, making it suitable for efficient switching applications in power supplies and motor control.
5. Thermal Resistance: It has a low thermal resistance, which aids in heat dissipation during operation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat sinking.
These features make the IRF5210PBF ideal for use in applications such as DC-DC converters, motor drivers, and electronic switching.

Package

The IRF5210PBF is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, providing good thermal performance and allowing for easy heat dissipation in electronic circuits.

Pinout

The IRF5210PBF is an N-channel MOSFET with a total of 8 pins. Its pin configuration is as follows:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The terminal where the load is connected.
3. Source (S): Connected to the ground or the lower potential in a circuit.
The other pins primarily relate to the device's package configuration and thermal management. The IRF5210PBF is designed for high-speed switching applications and can handle significant power levels, making it suitable for various applications, including motor drives, power supplies, and converters. Its key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of up to 50A.

Manufacturer

The manufacturer of the IRF5210PBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. Infineon is known for its innovation in power semiconductor technologies, particularly MOSFETs, IGBTs, and integrated circuits, serving various sectors such as automotive, industrial, and consumer electronics. They focus on providing efficient and reliable semiconductor solutions that enhance energy efficiency and performance across diverse applications.

Application

The IRF5210PBF is an N-channel MOSFET commonly used in power applications, including DC-DC converters, motor control, and switching power supplies. Its high voltage and current ratings make it suitable for industrial automation, automotive systems, and consumer electronics. Additionally, it is utilized in applications requiring efficient power management, such as inverters and battery management systems.

Equivalent

The IRF5210PBF is a N-channel MOSFET. Equivalent products include the IRF520, IRF540, STP16NF06, and FQP30N06L. Ensure to verify specifications like voltage, current ratings, and R_DS(on) for compatibility in your specific application. Always consult datasheets for detailed comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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