IRF520PBF

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IRF520PBF

MOSFET N-CH 100V 9.2A TO220AB

  • Fabricant
  • Mfr. Partie #IRF520PBF
  • Paquet TO-220-3
  • Fiche de données
  • En stock3472

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Spécifications

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 9.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 270mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 16 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 360 pF @ 25 V
PowerDissipation(Max) 60W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF520PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in electronic circuits for switching and amplification applications. It features a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of 9.2A at a 25°C junction temperature, and a gate threshold voltage (V_GS(th)) of 2 to 4V, making it suitable for various electronic projects.
The IRF520PBF has a low on-resistance (R_DS(on)) of about 0.27 ohms at V_GS = 10V, allowing it to efficiently handle high currents with minimal power loss. Its package options include TO-220 and DPAK, providing versatility in mounting and thermal management.
Common applications include motor control, power management, and switching circuits in both hobbyist and industrial settings. Proper thermal management is essential for reliable operation due to power dissipation during high current operation. The "PBF" suffix indicates that the component is lead-free, making it compliant with RoHS standards.

Features

The IRF520PBF is an N-channel MOSFET designed for switching and amplification applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle significant voltage levels in various circuits.
2. Current Rating: It supports continuous drain current (I_D) of up to 9.2A at a temperature of 25°C.
3. R_DS(on): The on-resistance is approximately 0.27Ω at V_GS of 10V, which contributes to efficient operation and minimal power loss during conduction.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2-4V, making it suitable for low-voltage applications.
5. Package Type: Comes in TO-220 and other forms, facilitating easy integration into electronic designs.
6. Fast Switching: Capable of fast switching speeds, ideal for PWM applications and motor control.
The IRF520PBF is widely used in power management systems, DC-DC converters, and general-purpose switching applications.

Package

The IRF520PBF is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is suitable for through-hole mounting, providing effective thermal management for power applications.

Pinout

The IRF520PBF is an N-channel MOSFET commonly used in switching applications. It has a total of three pins:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to this pin determines whether the device is on (conducting) or off (non-conducting).

2. Drain (D): The current flows into this pin when the MOSFET is in the "on" state. It is connected to the load.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It allows current to flow out of the MOSFET when it is conducting.
The IRF520PBF has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 9.2A, making it suitable for various applications in power electronics.

Manufacturer

The IRF520PBF is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on innovative technologies that enhance energy efficiency and connectivity. Infineon is known for its commitment to sustainability and advancing semiconductor solutions that support the transition to a digital and sustainable future.

Application

The IRF520PBF is an N-channel MOSFET commonly used in various applications, including switching power supplies, motor control, and automotive systems. It is suitable for driving loads in low to medium power applications, such as inverters, LED drivers, and audio amplifiers. Additionally, it can be used in high-frequency circuits due to its fast switching capabilities. Its robust design makes it ideal for relay replacements and solid-state switching applications.

Equivalent

Equivalent products to the IRF520PBF include the IRF540N, IRF510, and the IRF530N. These MOSFETs have similar voltage and current ratings but check specific datasheets for exact specifications. Always ensure they meet your application requirements in terms of threshold voltage, RDS(on), and package type.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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