IRF510

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IRF510

MOSFET N-CH 100V 5.6A TO220AB

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Spécifications

Supplier Vishay Siliconix
Package Tube
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 5.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 540mOhm @ 3.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 180 pF @ 25 V
PowerDissipation(Max) 43W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF510 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for switching and amplification applications in electronic circuits. It features a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 9.2A, and a maximum gate-source voltage (Vgs) of ±20V.
Key specifications include a low on-resistance (Rds(on)) of about 0.5 ohms, which enhances efficiency during operation. The IRF510 is capable of handling significant power loads, making it suitable for applications such as power amplifiers, motor controls, and inverters.
It can be driven by low-voltage logic levels, making it versatile for various control circuits. The device is typically housed in a TO-220 package, allowing for effective heat dissipation.
Overall, the IRF510 is valued for its reliability, efficiency, and versatility in both analog and digital applications. Proper handling and usage within specified limits are essential for optimal performance and longevity.

Features

The IRF510 is an N-channel MOSFET widely used in various electronic applications. Key features include:
1. Voltage Rating: Maximum drain-to-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 9.2A at 25°C, allowing for substantial load handling.
3. R_DS(on): Low on-resistance (approximately 0.5 ohms at V_GS = 10V), which minimizes power loss and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Between 2V to 4V, enabling it to operate with lower gate drive voltages.
5. Power Dissipation: Capable of dissipating up to 94W, depending on thermal management.
6. Package Type: Available in TO-220 and TO-247 packages, facilitating easy mounting and heat dissipation.
7. Fast Switching: Suitable for high-speed switching applications, including power supplies and amplifiers.
Overall, the IRF510 is a versatile component valued for its robustness in various power and switching applications.

Package

The IRF510 is typically packaged in a TO-220 format, which is a metal package that allows efficient heat dissipation. It can also be found in a TO-247 package.

Pinout

The IRF510 is an N-channel MOSFET commonly used for switching and amplification applications. It typically comes in a TO-220 package, which has three pins. The pinout and their functions are as follows:
1. Gate (G): This pin receives the input signal. A voltage applied to the gate controls the conductivity between the drain and source.

2. Drain (D): This pin is where the output current flows out of the device. It is connected to the load in switching applications.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It is the reference point for the gate voltage.
The IRF510 can handle a maximum continuous drain current of about 9.2A and has a maximum drain-source voltage rating of 100V, making it suitable for various electronic applications.

Manufacturer

The IRF510 is manufactured by International Rectifier, a company known for its production of power management semiconductors. International Rectifier specializes in designing and manufacturing a wide range of electronic components, including MOSFETs, IGBTs, and power ICs, primarily for applications in power conversion, energy efficiency, and motor control. Established in 1947, the company has built a reputation for innovative power solutions and is widely recognized in the semiconductor industry. In 2015, International Rectifier was acquired by Infineon Technologies, a leading global semiconductor manufacturer based in Germany, further expanding its product offerings and market reach in the field of power electronics.

Application

The IRF510 is an N-channel MOSFET primarily used in low to medium-power applications. Key application areas include switching power supplies, motor drives, audio amplifiers, and RF amplifiers. It is also suitable for use in electronic load circuits and as a general-purpose switch in various electronic devices. Its ability to handle moderate voltage and current makes it versatile in both hobbyist and industrial circuits.

Equivalent

The IRF510 is a N-channel MOSFET commonly used in power applications. Equivalent products include:
1. IRF520
2. IRF540
3. 2N7000 (for lower power applications)
4. STP16NF06
5. FQP13N10
Ensure to check the datasheets for specific characteristics like voltage, current ratings, and threshold voltages before substitution.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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