IRF3575DTRPBF

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IRF3575DTRPBF

MOSFET 2N-CH 25V 303A PQFN

  • Fabricant
  • Mfr. Partie #IRF3575DTRPBF
  • Paquet 32-PowerWFQFN
  • Fiche de données
  • En stock5055

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Spécifications

Package Tape & Reel (TR)
ProductStatus Obsolete
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 25V
Current-ContinuousDrain(Id)@25°C 303A (Tc)
MountingType Surface Mount
Package/Case 32-PowerWFQFN

Vue d'ensemble

Description

The IRF3575DTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in various electronic circuits. With a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) rating of 50A at 25°C, it is suitable for power management, motor control, and other applications requiring significant power handling.
The device is housed in a TO-220 package, making it easy to integrate into designs with sufficient thermal dissipation capabilities. The IRF3575DTRPBF is also characterized by its fast switching speeds, making it ideal for applications such as DC-DC converters and inverters. Its gate threshold voltage (V_GS(th)) is typically low, allowing for easy driving with standard logic level signals.
Overall, the IRF3575DTRPBF is a robust choice for designers seeking reliable and efficient power solutions in their electronic projects.

Features

The IRF3575DTRPBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 75V.
2. Current Rating: Continuous drain current (I_D) capability of up to 75A, providing robust performance in demanding environments.
3. Low R_DS(on): Extremely low on-state resistance (R_DS(on)) of approximately 12 mΩ at V_GS = 10V, enhancing efficiency by minimizing conduction losses.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with standard logic levels.
5. Fast Switching Speed: Optimized for rapid switching applications, making it suitable for converters and other power management circuits.
6. Package: Available in a TO-220 package, facilitating effective thermal management.
These features make the IRF3575DTRPBF ideal for use in DC-DC converters, motor drivers, and other power electronic applications where performance and efficiency are critical.

Package

The IRF3575DTRPBF is packaged in a TO-220 style, which is a through-hole package type designed for power MOSFET applications. It features a metal tab for heat dissipation and is commonly used for high-power switching and amplification.

Pinout

The IRF3575DTRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total pin count of 8. It is designed for high-speed switching applications. The primary functions of the pins are as follows:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or negative side of the power supply.
The typical configuration includes:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pin 6: Gate
- Pin 7: Drain
- Pin 8: Source
This configuration allows for efficient control of power in various applications, including DC-DC converters and motor drives. The device supports high voltage and current ratings, making it suitable for demanding applications.

Manufacturer

The IRF3575DTRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial, communication, and consumer electronics. The company focuses on power management, security, and sensor technologies, making it a key player in the semiconductor industry.

Application

The IRF3575DTRPBF is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, and power supplies. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in automotive applications, renewable energy systems, and industrial automation for efficient power handling.

Equivalent

The IRF3575DTRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, AOD8N75, and FQP75N75. Always verify specifications such as voltage, current rating, and RDS(on) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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