IRF3205ZPBF

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IRF3205ZPBF

MOSFET N-CH 55V 75A TO220AB

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  • Mfr. Partie #IRF3205ZPBF
  • Paquet TO-220AB
  • Fiche de données
  • En stock5323

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.5mOhm @ 66A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3450 pF @ 25 V
PowerDissipation(Max) 170W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF3205ZPBF is a N-channel MOSFET designed for high-performance switching applications. It features low on-resistance (Rds(on)) and high current capability, making it suitable for use in power management, motor control, and DC-DC converters. With a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 110A, it offers excellent efficiency in power conversion tasks.
Key specifications include a low Rds(on) value of around 8 mΩ, enabling minimal power loss and heat generation during operation. The IRF3205ZPBF is also characterized by a fast switching speed, which enhances its performance in high-frequency applications. It comes in a TO-220 package, allowing for effective heat dissipation.
This MOSFET is particularly valued in automotive and industrial applications due to its robustness and reliability. It is also environmentally friendly, as it is RoHS compliant. Overall, the IRF3205ZPBF is a versatile component for engineers seeking reliable power management solutions.

Features

The IRF3205ZPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
- V_DS (Drain-Source Voltage): 55V, allowing it to handle high voltage applications.
- I_D (Continuous Drain Current): Up to 110A, suitable for high current applications.
- R_DS(on) (On-Resistance): Typically around 8 mΩ at V_GS = 10V, ensuring low conduction losses.
- Gate Threshold Voltage (V_GS(th)): Ranges from 2V to 4V, ensuring efficient drive from low-voltage logic circuits.
- Fast Switching Speed: Suitable for applications in power supplies, motor control, and DC-DC converters.
- Package Type: Available in a TO-220 package, allowing for effective heat dissipation.
The IRF3205ZPBF is ideal for use in automotive, industrial, and consumer electronics applications where efficiency and reliability are crucial. Its low on-resistance and high current capability make it a popular choice in power management circuits.

Package

The IRF3205ZPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is designed for through-hole mounting, making it suitable for applications requiring high power and thermal performance.

Pinout

The IRF3205ZPBF is a N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin controls the MOSFET's switching action. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the output current exits the MOSFET. It connects to the load or the power supply.
3. Source (S): This pin is the entry point for the current coming from the load. It is often connected to ground in low-side switching applications.
The IRF3205ZPBF is widely used in power applications, capable of handling high currents (up to 110A) and supporting a maximum drain-source voltage of 55V. Its low on-resistance ensures efficient operation in switching applications.

Manufacturer

The IRF3205ZPBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is headquartered in Neubiberg, Germany, and specializes in power semiconductors, microcontrollers, sensors, and security technology. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and smart technologies. Infineon is known for its innovation in power management and discrete semiconductor products, making it a key player in the electronics market.

Application

The IRF3205ZPBF is a N-channel MOSFET primarily used in power management applications. Its typical areas include automotive systems, power supplies, motor drives, and high-speed switching applications. It is also suitable for synchronous rectification in DC-DC converters and solar inverters, where efficiency and thermal performance are critical.

Equivalent

Equivalent products to the IRF3205ZPBF include the IRF3205, IRF3204, and FQP50N06. Additionally, the STP50NF06 and AOD5050 are also compatible options. Always verify specifications such as voltage rating, current capacity, and on-resistance to ensure suitability in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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