IRF2907ZPBF

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IRF2907ZPBF

MOSFET N-CH 75V 160A TO220AB

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Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF2907

Vue d'ensemble

Description

The IRF2907ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It is characterized by a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation. The device features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 30A, making it suitable for use in various power management and conversion tasks, such as motor control, power supplies, and DC-DC converters.
The IRF2907ZPBF also incorporates a fast switching speed, enabling it to operate effectively in high-frequency applications. Its TO-220 package allows for efficient heat dissipation. Additionally, the "ZPBF" designation indicates it is a RoHS-compliant device, meaning it is free from harmful substances, aligning with modern environmental standards.
Overall, the IRF2907ZPBF is a versatile, reliable choice for engineers seeking a robust MOSFET for demanding electronic applications.

Features

The IRF2907ZPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 30A, facilitating robust performance in power management.
3. R_DS(on): The on-resistance is typically low (around 0.045 Ohm), which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing for easier drive from standard logic levels.
5. Package: It comes in a TO-220 package, providing excellent thermal performance and ease of heat dissipation.
6. Applications: It is suitable for use in switching power supplies, motor drivers, and other high-speed applications.
Overall, the IRF2907ZPBF is ideal for designers looking for efficient power control solutions.

Package

The IRF2907ZPBF is packaged in a TO-220 form factor, which is a metal-can package designed for power devices, providing good thermal performance and easy mounting.

Pinout

The IRF2907ZPBF is a N-channel MOSFET with a pin count of 6. Its typical applications include power management, switching applications, and amplifiers.
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity. A voltage applied to this pin turns the device on or off.
2. Drain (D): The output pin that connects to the load. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): The input pin that connects to the ground or the negative side of the power supply.
4. Gate-Source Voltage (Vgs): Controls the turn-on voltage and is crucial for switching operations.
5. Drain-Source Voltage (Vds): Specifies the maximum voltage that can be applied between the drain and source.
6. Thermal Pad: Used for heat dissipation to help manage thermal performance.
The IRF2907ZPBF is noted for its high efficiency and fast switching speeds, making it suitable for various electronic applications.

Manufacturer

The IRF2907ZPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in advanced semiconductor solutions, focusing on markets such as automotive, industrial power control, and security technologies. The company is known for producing a wide range of products, including power MOSFETs, microcontrollers, and sensors, catering to various applications in electronics and power management. Infineon emphasizes innovation and sustainability, positioning itself as a leader in the semiconductor industry.

Application

The IRF2907ZPBF is a N-channel MOSFET primarily used in applications such as power management, motor control, and switching power supplies. Its high efficiency and fast switching capabilities make it suitable for DC-DC converters, battery management systems, and renewable energy systems. Additionally, it can be employed in high-frequency amplifiers and other electronic circuits requiring efficient switching and low on-resistance.

Equivalent

The IRF2907ZPBF is a N-channel MOSFET. Equivalent products include the STP16NF06, IRF2807, and FQP30N06L. Always check the specific datasheets for key parameters like voltage, current ratings, and RDS(on) to ensure compatibility for your application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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