IRF2804PBF

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IRF2804PBF

MOSFET N-CH 40V 75A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 240 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6450 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF2804PBF is a dual N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance (R_DS(on)), allowing for reduced power loss and increased thermal performance. With a voltage rating of 40V and a continuous drain current of up to 55A, it is suitable for various applications, including power supplies, motor control, and power management systems.
This MOSFET operates well in high-speed switching environments, making it ideal for use in converters and inverters. The gate threshold voltage is designed for compatibility with standard logic levels, enabling easy interfacing with microcontrollers and digital circuits.
Additionally, the IRF2804PBF is packaged in a TO-220 format, which aids in heat dissipation and mounting flexibility. It is also RoHS compliant, ensuring it meets environmental standards. Overall, the IRF2804PBF is a reliable component for designers seeking efficient power management solutions in their electronic circuits.

Features

The IRF2804PBF is a high-performance N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: Continuous drain current (I_D) of up to 28A.
3. R_DS(on): Low on-resistance, typically 0.025Ω at 10V gate voltage, ensuring efficient power handling.
4. Gate Threshold Voltage: V_GS(th) range from 1.0V to 2.5V, allowing for low-voltage drive capability.
5. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing efficiency in switching applications.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Thermal Resistance: Low thermal resistance ensures effective heat management under load conditions.
These features make the IRF2804PBF suitable for a variety of applications, including power management, motor control, and DC-DC converters.

Package

The IRF2804PBF is packaged in a TO-220 form factor. This package type features three terminals and is designed for high power applications, providing efficient heat dissipation and ease of mounting on heat sinks.

Pinout

The IRF2804PBF is a dual N-channel MOSFET that features a total of 8 pins. The pin configuration is as follows:
1. Gate 1 (G1) - Control input for the first N-channel MOSFET.
2. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Control input for the second N-channel MOSFET.
5. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Drain 1 and Drain 2 Common - These drains are internally connected.
8. Source 1 and Source 2 Common - These sources are also internally connected.
The primary function of the IRF2804PBF is to switch and amplify electronic signals in various applications, including power management, motor control, and DC-DC converters. Its dual configuration allows for more compact designs in circuits requiring multiple switching elements.

Manufacturer

The IRF2804PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in a wide range of semiconductor solutions for various applications including automotive, industrial, and consumer electronics. The company focuses on power management, sensor technology, and security solutions, among other areas, contributing significantly to advancements in energy efficiency and connectivity. Infineon is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The IRF2804PBF is a dual N-channel MOSFET commonly used in various applications, including power management, motor control, and switching applications. It is suitable for high-speed switching in power converters, DC-DC converters, and H-bridge configurations for driving motors. Its low on-resistance and high current handling make it ideal for energy-efficient designs in automotive, industrial, and consumer electronics.

Equivalent

The IRF2804PBF is an N-channel MOSFET. Equivalent products include:
1. STP80NF55 - STMicroelectronics
2. FQP30N06L - ON Semiconductor
3. BSS138 - Nexperia (lower current)
4. Si7456DP - Vishay
5. PSMN2R8-80BS - Nexperia
Always verify specifications such as voltage, current rating, and R_DS(on) for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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