IRF200S234

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IRF200S234

MOSFET N-CH 200V 90A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 90A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 16.9mOhm @ 51A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 162 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6484 pF @ 50 V
PowerDissipation(Max) 417W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3

Vue d'ensemble

Description

The IRF200S234 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a N-channel configuration, which allows it to conduct current when a positive voltage is applied to its gate terminal. This device is characterized by low on-resistance, enabling efficient power management in electronic circuits.
Key specifications include a maximum drain-source voltage (V_DS) rating, typically around 200V, and a continuous drain current (I_D) rating that can handle substantial loads, making it suitable for applications in power supplies, motor control, and industrial automation. The IRF200S234 is also valued for its thermal stability and fast switching capabilities, which help to minimize energy losses.
This MOSFET is commonly used in conjunction with microcontrollers and other digital logic devices, providing reliable performance in various electronic circuits. Its robust design and versatility make it a popular choice in both consumer and industrial applications.

Features

The IRF200S234 is an N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: Capable of handling a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 30A, allowing it to manage substantial loads.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 0.3 ohms, which results in efficient operation with reduced power loss.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling ease of drive with standard logic levels.
5. Package Type: Available in a TO-220 package, which offers good thermal performance for heat dissipation.
6. Fast Switching: Designed for fast switching speeds, making it ideal for applications like DC-DC converters and motor control.
These features make the IRF200S234 suitable for a variety of power management and switching applications in consumer electronics, industrial equipment, and automotive systems.

Package

The IRF200S234 is typically packaged in a TO-220 or similar surface-mount package, designed for efficient thermal management and ease of handling in electronic circuits. These packages allow for good heat dissipation and are commonly used in power electronics applications.

Pinout

The IRF200S234 is a power MOSFET housed in a TO-220 package, featuring a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load connects. The current flows from the drain when the MOSFET is on.
3. Source (S): This is the terminal that connects to the ground or the negative side of the load.
The IRF200S234 is typically used in applications requiring high efficiency and fast switching, such as in power supplies and motor drivers.

Manufacturer

The IRF200S234 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in developing and providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is recognized for its innovation in power management and its commitment to enabling sustainable technologies.

Application

The IRF200S234 is a high-voltage N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, switch-mode power supplies, motor drives, and high-frequency switching circuits. It is suitable for use in automotive systems, renewable energy systems, and industrial automation due to its efficiency and thermal performance.

Equivalent

The IRF200S234 is a high-voltage MOSFET. Equivalent products include the IRF200, STP9NK90Z, FQP90N90, and AUIRF200. It's important to check the specific electrical characteristics like voltage, current, and R_DS(on) to ensure compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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