IRF1405PBF

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IRF1405PBF

MOSFET N-CH 55V 169A TO220AB

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Spécifications

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 169A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 5.3mOhm @ 101A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 260 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5480 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Vue d'ensemble

Description

The IRF1405PBF is a N-channel MOSFET designed for high-speed switching applications in power electronics. It features a maximum drain-to-source voltage (V_DS) of 55V and a continuous drain current (I_D) rating of up to 50A, making it suitable for high-power applications. The device has a low on-resistance (R_DS(on)) of around 0.03 ohms, which enhances efficiency and reduces heat generation during operation.
The IRF1405PBF is packaged in a TO-220 form factor, facilitating easy heat dissipation. It is commonly used in power supplies, motor drivers, and other applications requiring efficient switching. The part is also known for its fast switching speeds, making it ideal for pulse-width modulation (PWM) applications.
Additionally, the "PBF" suffix indicates that the MOSFET is lead-free, adhering to environmental regulations. Overall, the IRF1405PBF is a reliable choice for designers needing robust performance in demanding electronic circuits.

Features

The IRF1405PBF is an N-channel MOSFET designed for high efficiency and reliability in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for a wide range of power supply applications.
2. Current Rating: The continuous drain current (I_D) is up to 80A, allowing it to handle significant loads.
3. On-Resistance: The low R_DS(on) (typically around 0.027 ohms at V_GS = 10V) ensures minimal power loss and improved thermal performance.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, which allows for easy interfacing with low-voltage logic levels.
5. Package Type: It is available in a TO-220 package, providing good heat dissipation capabilities.
6. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power conversion systems.
These features make the IRF1405PBF suitable for applications in power supplies, motor drives, and other switching circuits.

Package

The IRF1405PBF is packaged in a TO-220 style format. This package type is designed for power applications, providing efficient heat dissipation and mounting options for easy integration into circuits.

Pinout

The IRF1405PBF is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the terminal where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This terminal is where the current exits the MOSFET when it is conducting.
The IRF1405PBF is designed for high-speed switching applications and has a maximum drain-source voltage of 55V and a continuous drain current rating of up to 40A. It is often used in power management and motor control applications.

Manufacturer

The IRF1405PBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and security technologies. The company is known for its innovation in power management, microcontrollers, and sensors, serving a diverse range of markets. Infineon focuses on sustainable and efficient technologies, often contributing to advancements in energy efficiency and electronic mobility.

Application

The IRF1405PBF is a power MOSFET commonly used in applications such as power supplies, DC-DC converters, motor drivers, and audio amplifiers. Its features make it suitable for high-efficiency switching applications, including automotive systems, renewable energy systems (like solar inverters), and industrial automation. Its low on-resistance and high-speed switching capabilities enhance performance in various power management solutions.

Equivalent

The IRF1405PBF is a N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. AON7404 - AOS Power
3. FQP30N06L - Fairchild Semiconductor
4. BSS138 - ON Semiconductor (lower voltage)
5. IRF3205 - International Rectifier (higher current)
Always verify specifications like V_DS, I_D, and R_DS(on) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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