IRF1310NSTRLPBF

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IRF1310NSTRLPBF

MOSFET N-CH 100V 42A D2PAK

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 36mOhm @ 22A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1900 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 160W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Vue d'ensemble

Description

The IRF1310NSTRLPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching and amplification in electronic circuits. It features a low on-resistance (RDS(on)) of approximately 0.1 ohms, which minimizes power loss and heat generation during operation. The device can handle a voltage rating of up to 100V and a continuous drain current of 25A, making it suitable for various applications, including power management, motor control, and high-speed switching.
The IRF1310NSTRLPBF has a gate threshold voltage ranging from 2V to 4V, allowing it to be driven by low-voltage logic levels, which enhances its compatibility with microcontrollers and other digital devices. Its package is typically in a TO-220 format, providing efficient thermal dissipation.
This MOSFET is ideal for applications requiring rapid switching speeds and high efficiency, making it popular in power supply circuits, LED drivers, and automotive electronics. Overall, the IRF1310NSTRLPBF is a versatile and reliable component in modern electronic designs.

Features

The IRF1310NSTRLPBF is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 29A, allowing it to handle significant load currents.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.06 ohms at V_GS = 10V, ensuring efficient power delivery with minimal heat generation.
4. Gate Threshold Voltage: The typical gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling low-voltage drive capability.
5. Package: The device comes in a TO-220 package, providing good thermal management for high-power applications.
6. Fast Switching: It exhibits fast switching speeds, making it suitable for PWM and other high-frequency applications.
7. Applications: Commonly used in motor control, power supplies, and other high-efficiency switching circuits.
These features make the IRF1310NSTRLPBF an excellent choice for a variety of electronic designs.

Package

The IRF1310NSTRLPBF is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRF1310NSTRLPBF is a N-channel MOSFET used for various switching applications. It has a total of 8 pins. Here’s a brief overview of the pin configuration and functions:
1. Gate (G) - Pin 1: Controls the MOSFET operation (turns it on/off).
2. Drain (D) - Pin 2: The terminal through which the load current flows when the MOSFET is on.
3. Source (S) - Pin 3: Connects to ground or the negative side of the load.
4. Gate (G) - Pin 4 (additional gate terminal for dual-gate configurations).
5. Drain (D) - Pin 5 (additional drain terminal for specific applications).
6. Source (S) - Pin 6 (additional source terminal for enhanced performance).
7. Gate (G) - Pin 7 (for external control signal in certain designs).
8. Source (S) - Pin 8 (for power management).
The IRF1310NSTRLPBF is known for its low on-resistance and high-speed switching capabilities, making it suitable for power management, motor control, and other applications requiring efficient switching.

Manufacturer

The IRF1310NSTRLPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company that focuses on automotive, industrial power control, and security technologies. They provide various products, including power semiconductors, microcontrollers, and sensors that cater to a wide range of applications such as automotive systems, renewable energy, and industrial automation. Infineon is known for its innovation in power management and efficiency solutions, making it a key player in the semiconductor industry.

Application

The IRF1310NSTRLPBF is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor controllers, and power supplies. It is suitable for high-speed switching tasks, enabling efficient control of electrical loads. Its low on-resistance and high current handling capabilities make it ideal for applications in automotive, industrial automation, and renewable energy systems.

Equivalent

The IRF1310NSTRLPBF is an N-channel MOSFET. Equivalent products include the AON6114, SI4460DY, and FDS6910. When searching for replacements, ensure they have similar voltage ratings, current handling, and R_DS(on) specifications. Always verify with the datasheets for compatibility in your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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