IRF1310NPBF

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IRF1310NPBF

MOSFET N-CH 100V 42A TO220AB

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Spécifications

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF1310

Vue d'ensemble

Description

The IRF1310NPBF is a N-channel MOSFET manufactured by Infineon Technologies, designed for high-speed switching applications. It features a low on-resistance (R_DS(on)), allowing for efficient power management with minimal heat generation. The device has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 30A, making it suitable for various applications, including power supplies, motor control, and DC-DC converters.
The IRF1310NPBF is housed in a TO-220 package, which facilitates effective heat dissipation. Key characteristics include fast switching speeds, which enhance performance in high-frequency applications, and a gate threshold voltage (V_GS(th)) that enables easy interfacing with low-voltage control signals.
This MOSFET is also RoHS compliant, meaning it adheres to environmental regulations regarding hazardous substances. Overall, the IRF1310NPBF is an efficient and versatile component ideal for modern electronic designs requiring reliable power management.

Features

The IRF1310NPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: The continuous drain current (I_D) is rated at 36A, making it suitable for power applications.
3. R_DS(on): It offers a low on-resistance of around 0.15 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: The device supports high-speed switching, enhancing performance in various applications.
6. Package: Available in TO-220 and DPAK packages for versatile mounting options.
7. Thermal Performance: With a low thermal resistance, it effectively dissipates heat, improving reliability.
The IRF1310NPBF is ideal for use in DC-DC converters, motor drives, and other power management applications.

Package

The IRF1310NPBF is packaged in a TO-220 style package. This type is commonly used for power devices, providing good thermal management and electrical performance.

Pinout

The IRF1310NPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied here will turn the device on or off.
2. Drain (D): This pin is where the load is connected. The MOSFET allows current to flow from the drain to the source when it is turned on.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. It completes the circuit for current flow when the MOSFET is activated.
The IRF1310NPBF is designed for high-speed switching applications, featuring a low on-resistance and capable of handling significant current levels.

Manufacturer

The IRF1310NPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, serving various industries including automotive, industrial, and consumer electronics. The company is headquartered in Neubiberg, Germany, and focuses on developing innovative solutions for energy efficiency, mobility, and security. Infineon plays a significant role in advancing technologies for electric vehicles, renewable energy, and Internet of Things (IoT) applications.

Application

The IRF1310NPBF is an N-channel MOSFET primarily used in applications such as power management, motor control, DC-DC converters, and switching regulators. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics, facilitating tasks like load switching and amplification in various electronic devices.

Equivalent

The IRF1310NPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP13N10, and IRF3205. These devices share similar voltage ratings and current handling capabilities, but always verify specific electrical characteristics to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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