IRF1010ZPBF

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IRF1010ZPBF

MOSFET N-CH 55V 75A TO220AB

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Spécifications

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number IRF1010

Vue d'ensemble

Description

The IRF1010ZPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications such as power management and switching. It features low on-resistance (RDS(on)), which enhances efficiency by reducing power loss during operation. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 33A, it is suitable for various applications, including DC-DC converters, motor drives, and power inverters.
The device is housed in a TO-220 package, providing effective thermal dissipation, which is crucial for maintaining performance in demanding environments. It also has a gate threshold voltage (VGS(th)) ranging from 2V to 4V, allowing for easy drive directly from logic-level signals.
Overall, the IRF1010ZPBF is an excellent choice for designers needing reliable and efficient switching solutions in their electronic circuits.

Features

The IRF1010ZPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. V_DS Rating: 100V maximum drain-source voltage, allowing it to handle high voltage applications.
2. I_D Rating: Continuous drain current of 10A at 25°C, suitable for various load demands.
3. R_DS(on): Low on-resistance (typically 0.1 ohm), minimizing power loss and improving efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, ensuring it can be driven effectively by low-voltage control circuits.
5. Fast Switching Speed: High-speed switching capabilities, making it ideal for applications like power supplies and motor control.
6. Thermal Resistance: Improved thermal performance with a low junction-to-case thermal resistance, facilitating better heat dissipation.
7. Package Type: Available in a TO-220 package, enabling easy mounting and heat sinking.
These features make the IRF1010ZPBF suitable for various applications in automotive, industrial, and consumer electronics.

Package

The IRF1010ZPBF is packaged in a TO-220 style package. This type of package provides efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IRF1010ZPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET.
3. Source (S): This pin is connected to ground or the negative side of the circuit, serving as the return path for current.
The IRF1010ZPBF is rated for high voltage and current applications, making it suitable for power switching and amplifier applications in electronic circuits. Its low on-resistance ensures efficient operation.

Manufacturer

The IRF1010ZPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in a wide range of semiconductor products, including power management, automotive, and industrial applications. The company is well-known for its innovations in power semiconductors, microcontrollers, and sensors, serving various sectors such as automotive, industrial, and consumer electronics. Infineon focuses on developing energy-efficient and high-performance solutions, contributing to advancements in areas like electric mobility, IoT, and renewable energy.

Application

The IRF1010ZPBF is an N-channel MOSFET primarily used in power management applications, such as DC-DC converters, power supply circuits, and motor drivers. It is ideal for high-speed switching applications, including synchronous rectification and load switching, due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in automotive electronics and other industrial applications requiring efficient power control.

Equivalent

Equivalent products to the IRF1010ZPBF include the IRF3205, STP75NF75, and AOD405. These MOSFETs have similar specifications in terms of voltage, current handling, and RDS(on) characteristics. Always verify specific parameters like VDS, ID, and thermal performance for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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