IRF1010EZSTRLP

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IRF1010EZSTRLP

MOSFET N-CH 60V 75A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8.5mOhm @ 51A, 10V
Vgs(th)(Max)@Id 4V @ 100µA
GateCharge(Qg)(Max)@Vgs 86 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2810 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Vue d'ensemble

Description

The IRF1010EZSTRLP is a N-channel MOSFET designed for high efficiency and low power loss applications. It features a low on-resistance (R_DS(on)) which minimizes heat generation and enhances performance in power management systems. With a maximum drain-source voltage of 100V and a continuous current rating of up to 10A, it's suitable for a variety of applications, including power supplies, motor control, and switching applications.
The device is housed in a compact TO-220 package, facilitating easy heat dissipation and PCB integration. Its fast switching capabilities make it ideal for high-frequency applications. Additionally, the IRF1010EZSTRLP has a gate threshold voltage that allows it to be driven easily with standard logic levels, ensuring compatibility with various control circuits.
Overall, the IRF1010EZSTRLP is a reliable choice for engineers seeking performance and efficiency in their electronic designs.

Features

The IRF1010EZSTRLP is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Low On-Resistance: Offers a low RDS(on), typically around 0.0075 ohms at VGS = 10V, enhancing efficiency in switching applications.
2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 100V, suitable for various power applications.
3. High Current Capability: Can handle continuous drain currents up to 30A, allowing for robust performance in demanding situations.
4. Fast Switching Speed: Facilitates quick turn-on and turn-off times, ideal for high-frequency applications.
5. TO-220 Package: Comes in a TO-220 package for effective thermal management and easy mounting.
6. Low Gate Charge: Ensures reduced drive power, improving overall efficiency in circuit designs.
These features make the IRF1010EZSTRLP suitable for use in power management, DC-DC converters, and motor control applications.

Package

The IRF1010EZSTRLP is packaged in a TO-220 type package, which is designed for efficient heat dissipation and ease of mounting on heatsinks in power applications.

Pinout

The IRF1010EZSTRLP is a N-channel MOSFET featuring a pin count of 8. Its primary functions include switching and amplification in various power applications. The device is typically used in power management and control circuits due to its ability to handle high voltages and currents efficiently.
### Pin Configuration:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out.
3. Source (S) - The terminal through which the current flows in.
4. Body Diode - Provides intrinsic protection and allows current to flow in reverse.
The IRF1010EZSTRLP is known for its low on-resistance and fast switching capabilities, making it suitable for high-efficiency power applications. It is commonly used in DC-DC converters, motor drivers, and other high-current applications.

Manufacturer

The IRF1010EZSTRLP is manufactured by Texas Instruments, a leading global semiconductor company. Texas Instruments designs and produces a wide range of electronic components, including integrated circuits, analog devices, and digital signal processors. The company is well-known for its innovation in the fields of analog and embedded processing and serves various industries, such as automotive, industrial, communications, and consumer electronics. Texas Instruments focuses on enabling customers to create efficient and innovative electronic solutions, emphasizing sustainability and technology advancement.

Application

The IRF1010EZSTRLP is a N-channel MOSFET commonly used in applications such as power management, motor control, and switching power supplies. It is suitable for high-speed switching in DC-DC converters, inverters, and other power electronic circuits. Its low on-resistance and high current handling capabilities make it ideal for automotive, industrial, and consumer electronics applications.

Equivalent

The IRF1010EZSTRLP is an N-channel MOSFET. Equivalent products include the IRF1010E, IRF1010N, and STP16NF06. Always check specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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