IPW90R120C3

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IPW90R120C3

MOSFETs N-Ch 900V 36A TO247-3 CoolMOS C3

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Spécifications

Packaging Tube
Standard Pack Qty 240

Vue d'ensemble

Description

The IPW90R120C3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It features a voltage rating of 1200 volts and a continuous drain current of 90 amperes, making it suitable for high-voltage applications such as power conversion and industrial power supplies.
This MOSFET is designed with a low on-resistance, which reduces power losses and enhances efficiency, especially in switching applications. Its trench technology allows for better performance at high frequencies, making it ideal for applications like automotive power electronics, renewable energy systems, and motor drives.
The IPW90R120C3 also boasts improved thermal management capabilities, facilitating better heat dissipation. Its high-speed switching characteristics and robust design are optimized for demanding environments. Overall, this device is a reliable choice for engineers seeking efficient and high-performance components in their designs.

Features

The IPW90R120C3 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Capable of handling up to 1200V, making it suitable for high-voltage applications.
2. Current Rating: Supports continuous drain currents up to 90A, allowing for robust power delivery.
3. Low RDS(on): Offers a low on-resistance typically around 0.12 ohms, ensuring efficient power management and reduced heat generation.
4. Fast Switching Speed: Facilitates high-frequency operation, enhancing overall system efficiency.
5. Thermal Performance: Designed with a low thermal resistance, improving thermal management in demanding applications.
6. Package Type: Available in a DPAK package, which provides good thermal performance and ease of mounting.
7. Applications: Ideal for use in power supplies, motor drives, and converter circuits.
These features make the IPW90R120C3 suitable for a variety of industrial and consumer applications requiring efficient power switching.

Package

The IPW90R120C3 is typically available in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and robust performance.

Pinout

The IPW90R120C3 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their respective functions are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the "on" state. It is connected to the load.
3. Source (S): The source pin is where the current enters the MOSFET. It is typically connected to the ground in low-side switching applications.
The IPW90R120C3 is designed for high-efficiency applications, featuring a low on-resistance and high voltage rating, making it suitable for power management and switching applications.

Manufacturer

The IPW90R120C3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial power control, and security. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, contributing significantly to energy efficiency and advanced technologies in multiple sectors. Founded in 1999 as a spin-off from Siemens AG, Infineon has since become a key player in the global semiconductor industry.

Application

The IPW90R120C3 is an IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its areas of application include motor drives, renewable energy systems (like solar inverters), industrial power supplies, and switch-mode power supplies. It is also utilized in UPS (Uninterruptible Power Supplies) and welding equipment due to its high efficiency and performance in high-voltage and high-current environments.

Equivalent

The IPW90R120C3 is an N-channel MOSFET from Infineon with a 120V rating and low R_DS(on). Equivalent products include the IRF840, STP8NK120Z, and FQD7N120. When selecting an alternative, ensure comparable voltage ratings, R_DS(on), and current handling capabilities to maintain performance in your application. Always check the specific datasheets for detailed specifications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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