IPW65R080CFD

Les images sont à titre de référence seulement

IPW65R080CFD

MOSFETs N-Ch 650V 43.3A TO247-3 CoolMOS CFD2

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Packaging Tube
Standard Pack Qty 240

Vue d'ensemble

Description

The IPW65R080CFD is a high-performance power MOSFET designed for various applications, particularly in power management and conversion systems. It features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) rating of 80A. The device is characterized by its low on-resistance (RDS(on)), which enhances efficiency and minimizes power losses during operation.
This MOSFET is based on Infineon’s CoolMOS technology, making it suitable for high-frequency applications such as switch-mode power supplies (SMPS), inverters, and motor drives. The IPW65R080CFD offers excellent thermal performance, with a high safe operating area (SOA) and is packaged in a TO-220 format for easy integration into designs.
Key features include fast switching speeds, reduced gate charge, and improved thermal stability, making it an ideal choice for designers looking to enhance the efficiency and reliability of their power electronic systems.

Features

The IPW65R080CFD is a N-channel MOSFET designed for high efficiency and performance in power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 80A at 25°C, allowing for significant power handling.
3. Low On-Resistance: R_DS(on) of about 0.080 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Optimized for high-frequency operation, making it suitable for switching power supplies and converters.
5. Robust Thermal Performance: Capable of handling high thermal loads, with a maximum junction temperature of 175°C.
6. TO-247 Package: Ensures efficient thermal dissipation and ease of handling in PCB designs.
7. Low Gate Charge (Q_g): Reduces drive losses, enhancing overall system efficiency.
These features make the IPW65R080CFD ideal for applications such as inverters, motor drives, and power converters in renewable energy systems and industrial equipment.

Package

The IPW65R080CFD is packaged in a TO-247 format. This package type is designed for high-power applications, offering efficient thermal management and robust mechanical stability, making it suitable for use in power electronics.

Pinout

The IPW65R080CFD is a N-channel MOSFET from Infineon Technologies, designed for high-efficiency applications. It features a total of 6 pins. The pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load connects.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
The specific functions of the pins are:
- Gate (G): Receives the voltage signal to turn the MOSFET on or off.
- Drain (D): Connects to the load and allows current to flow when the MOSFET is in the on-state.
- Source (S): Provides the return path for the current flowing through the MOSFET.
This device is typically used in power switching applications where efficiency and thermal performance are critical.

Manufacturer

The IPW65R080CFD is manufactured by Infineon Technologies AG, a leading global semiconductor company. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company is known for its innovative products that serve various industries, such as automotive, industrial, and consumer electronics. Infineon is headquartered in Munich, Germany, and operates globally, emphasizing energy efficiency and sustainability in its semiconductor technologies.

Application

The IPW65R080CFD is an N-channel MOSFET primarily used in applications such as power supplies, motor drives, and inverters. It is suitable for use in renewable energy systems, such as solar inverters and wind power converters, as well as in industrial power management and automotive systems for efficient power conversion and control. Its high efficiency and thermal performance make it ideal for switching applications in various electronic devices.

Equivalent

The IPW65R080CFD is an N-channel MOSFET used in power applications. Equivalent products include the Infineon IPW65R080C, STMicroelectronics STP65R080, and ON Semiconductor NTMFS5C604N. Always verify specifications such as voltage, current rating, and RDS(on) to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire