IPT015N10N5ATMA1

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IPT015N10N5ATMA1

MOSFET N-CH 100V 300A 8HSOF

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 300A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 1.5mOhm @ 150A, 10V
Vgs(th)(Max)@Id 3.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 211 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 16000 pF @ 50 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-HSOF-8-1

Vue d'ensemble

Description

The IPT015N10N5ATMA1 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient power management. It features a low on-resistance (RDS(on)) and high current handling capabilities, making it suitable for various switching and amplification applications in power electronics.
This specific MOSFET has a voltage rating of 100V and a current rating of 15A, which allows it to handle significant power loads while maintaining efficiency. Its low gate charge enhances switching speeds, reducing energy loss during operation.
Typically used in DC-DC converters, motor drives, and power supplies, the IPT015N10N5ATMA1 can contribute to improved thermal performance and overall system reliability. The device is available in a TO-220 package, facilitating easy heat dissipation and integration into PCB designs.
Overall, the IPT015N10N5ATMA1 is ideal for designers seeking efficient, robust components for modern electronic power applications.

Features

The IPT015N10N5ATMA1 is a power MOSFET from Infineon Technologies, designed for high-efficiency applications. Key features include:
1. N-Channel MOSFET: Suitable for switching applications and high-side driving.
2. Maximum Drain-Source Voltage (Vds): Rated at 100V, allowing for robust performance in high voltage applications.
3. Continuous Drain Current (Id): Supports up to 15A, making it suitable for various power management tasks.
4. Low On-Resistance (Rds(on)): Typically around 10 mΩ, which enhances efficiency by reducing conduction losses.
5. Fast Switching Speed: Ideal for high-frequency applications, contributing to improved overall system performance.
6. Thermal Resistance: Provides good thermal management, ensuring reliability under continuous operation.
7. Package Type: Available in a TO-220 package, facilitating ease of installation and heat dissipation.
Overall, the IPT015N10N5ATMA1 is designed for applications like power supplies, motor drives, and automotive systems, where efficiency and reliability are critical.

Package

The IPT015N10N5ATMA1 is packaged in a TO-220 format. This package type is commonly used for power transistors and IGBTs, offering good thermal performance and ease of mounting on heat sinks.

Pinout

The IPT015N10N5ATMA1 is an N-channel MOSFET transistor from Infineon Technologies. It features a total of TO-220 package with 3 pins.
Pin Functions:
1. Gate (G): This pin controls the MOSFET; applying a voltage here turns the device on.
2. Drain (D): This is the output pin where the current flows out when the device is on.
3. Source (S): This pin is typically connected to ground or the negative side of the circuit.
The IPT015N10N5ATMA1 is designed for high-performance applications, with a drain-source voltage rating of 100V and a continuous drain current of up to 15A. Its low on-resistance (RDS(on)) contributes to improved efficiency in switching applications.

Manufacturer

The manufacturer of the IPT015N10N5ATMA1 is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and security solutions. Infineon operates in various sectors, providing components for applications in automotive, industrial, communication, and consumer electronics. The IPT015N10N5ATMA1 is a part of their IGBT (Insulated Gate Bipolar Transistor) product line, which is widely used in power conversion and control applications. Infineon is recognized for its innovation and contributions to advancing technology in several key industries.

Application

The IPT015N10N5ATMA1 is a high-performance N-channel MOSFET used in various applications, including power supplies, DC-DC converters, motor drives, and industrial automation. Its features make it suitable for energy-efficient switching in automotive, consumer electronics, and renewable energy systems. Additionally, it can be utilized in power management for electric vehicles and other demanding power applications due to its low on-resistance and high thermal performance.

Equivalent

The IPT015N10N5ATMA1 is an IGBT module. Equivalent products include the IGBT models like the Infineon IGBT5 series, Vishay's IGBT series, and the ON Semiconductor MBR series, among others. Ensure to check specifications like voltage, current rating, and switching characteristics for compatibility. Always consult the manufacturer's datasheets for precise matching.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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