IPS70R600P7S

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IPS70R600P7S

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  • Mfr. Partie #IPS70R600P7S
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Spécifications

Technology Si
Packaging Tube
Brand Infineon / IR
Product Type MOSFETs
Subcategory Transistors

Vue d'ensemble

Description

The IPS70R600P7S is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power applications. It features a maximum collector-emitter voltage of 600V and a continuous collector current rating of 70A, making it suitable for various applications, including motor drives, inverters, and power supplies.
This IGBT is known for its low saturation voltage, which enhances efficiency and reduces power losses in conversion systems. The device also incorporates advanced thermal management capabilities, allowing for higher operating temperatures and improved reliability. Its fast switching speeds are particularly beneficial in reducing switching losses.
The IPS70R600P7S is housed in a robust package that facilitates easy integration into circuits, ensuring efficient heat dissipation. Overall, this IGBT is ideal for engineers seeking a reliable solution for high-power applications, combining efficiency, performance, and durability.

Features

The IPS70R600P7S is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 600V, suitable for high-voltage applications.
2. Current Handling: It has a continuous drain current rating of 70A, allowing it to handle significant loads.
3. Low RDS(on): The device boasts a low on-resistance (RDS(on)), typically around 0.7Ω, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Optimized for rapid switching, making it ideal for use in switch-mode power supplies and inverters.
5. Thermal Performance: It features a robust thermal capability, helping to manage heat during operation and ensuring reliability.
6. Package Type: Available in a TO-247 package, which supports efficient heat dissipation and ease of integration into circuit designs.
Overall, the IPS70R600P7S is engineered for demanding power electronics applications, offering a blend of performance, robustness, and efficiency.

Package

The IPS70R600P7S is typically packaged in a TO-247 style package, which is a robust, insulated package suitable for high-power applications. It features three terminals for easy mounting and heat dissipation.

Pinout

The IPS70R600P7S is an N-channel MOSFET transistor from Infineon, specifically designed for high-voltage applications. It features a TO-247 package with a pin count of 3.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage at this pin allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. The MOSFET conducts current from the drain to the source when the gate is activated.
3. Source (S): This pin is connected to the ground or return path in a circuit. The current flows out of the source when the device is in the on state.
The IPS70R600P7S is rated for a maximum drain-source voltage of 600V and a continuous drain current of 70A, making it suitable for various power conversion applications.

Manufacturer

The IPS70R600P7S is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on applications in automotive, industrial, and consumer electronics, contributing significantly to the fields of energy efficiency, mobility, and security. Infineon is known for its innovation in power management and is a key player in the global semiconductor market.

Application

The IPS70R600P7S is a high-performance IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including motor drives, industrial automation, renewable energy systems (like solar inverters), and power supply circuits. Its high voltage and current ratings make it ideal for applications requiring efficient switching and thermal management, such as traction drives and UPS systems.

Equivalent

The IPS70R600P7S is a high-voltage IGBT typically used in power applications. Equivalent products include:
1. IXYS IXGH60N60C3D - 600V, 70A IGBT
2. Infineon IGBT5 FZ600R65KF4 - 600V, 100A IGBT
3. ON Semiconductor MBRB120 - 600V, 70A IGBT
Always verify specifications for exact compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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