IPP320N20N3G

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IPP320N20N3G

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  • Mfr. Partie #IPP320N20N3G
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Spécifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Unconfirmed
HTS 8541.29.00.95
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Process Technology OptiMOS
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 34
Maximum Drain Source Resistance (MOhm) 32@10V
Typical Gate Charge @ Vgs (nC) 22@10V
Typical Gate Charge @ 10V (nC) 22
Typical Input Capacitance @ Vds (pF) 1770@100V
Maximum Power Dissipation (mW) 136000
Typical Fall Time (ns) 4
Typical Rise Time (ns) 9
Typical Turn-Off Delay Time (ns) 21
Typical Turn-On Delay Time (ns) 11
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Packaging Tube
Mounting Through Hole
Package Height 9.25
Package Width 4.4
Package Length 10
PCB changed 3
Standard Package Name TO
Supplier Package TO-220
Pin Count 3
Lead Shape Through Hole
Maximum Gate Threshold Voltage (V) 4
Maximum IDSS (uA) 1
Operating Junction Temperature (°C) -55 to 175
Tab Tab
Maximum Gate Source Leakage Current (nA) 100
Typical Gate to Drain Charge (nC) 3
Typical Gate to Source Charge (nC) 8
Typical Reverse Recovery Charge (nC) 500
Typical Switch Charge (nC) 5
Typical Reverse Transfer Capacitance @ Vds (pF) 4@100V
Minimum Gate Threshold Voltage (V) 2
Typical Output Capacitance (pF) 135
Maximum Pulsed Drain Current @ TC=25°C (A) 136
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 40
Typical Diode Forward Voltage (V) 0.9
Typical Gate Plateau Voltage (V) 4.4
Typical Reverse Recovery Time (ns) 110
Maximum Diode Forward Voltage (V) 1.2
Typical Gate Threshold Voltage (V) 3
Maximum Positive Gate Source Voltage (V) 20

Vue d'ensemble

Description

The IPP320N20N3G is a high-performance N-channel power MOSFET designed for use in various applications, including industrial and automotive sectors. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 320A, making it suitable for high-voltage and high-current applications.
This MOSFET is built using advanced Trench technology, which enhances its efficiency and reduces conduction losses. It also has a low gate threshold voltage, allowing for easy interfacing with logic-level control signals. The IPP320N20N3G offers low on-resistance (RDS(on)), which contributes to improved thermal performance and energy efficiency in power conversion systems.
Key specifications include fast switching capabilities, robust thermal stability, and high reliability, making it ideal for use in power supplies, motor drives, and inverters. Overall, the IPP320N20N3G is a versatile component that helps optimize the performance of power electronic systems.

Features

The IPP320N20N3G is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (ID) is up to 320A, allowing it to handle significant power loads.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 0.025 ohms, minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient drive characteristics.
5. Thermal Performance: With a high maximum junction temperature (TJ), it can operate in demanding conditions.
6. Package Type: It is available in a TO-220 package, providing good thermal dissipation.
These features make the IPP320N20N3G ideal for applications such as power supplies, motor drives, and other high-frequency switching applications.

Package

The IPP320N20N3G is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and easy mounting, making it suitable for power applications.

Pinout

The IPP320N20N3G is a N-channel MOSFET from Infineon Technologies, typically housed in a TO-220 package. It features a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. The drain is connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower voltage point in the circuit.
This device is suitable for various applications, including power management and switching due to its low on-resistance and high current handling capability.

Manufacturer

The IPP320N20N3G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security technologies. The company is known for its innovative products that cater to various industries such as automotive, industrial, communication, and consumer electronics. Infineon focuses on enhancing energy efficiency and sustainability through its advanced semiconductor technologies.

Application

The IPP320N20N3G is an N-channel MOSFET primarily used in power management applications. Its application areas include industrial motor drives, power supplies, automotive electronics, and renewable energy systems. It is suitable for high-efficiency switching, DC-DC converters, and inverters, effectively handling high voltages and currents for improved performance in various electronic devices.

Equivalent

The IPP320N20N3G is an N-channel MOSFET from Infineon. Equivalent products include the STP320N20, FQP30N20, and IRF320. For precise application requirements, always check specifications like Vds, Rds(on), and current ratings to ensure compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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