IPP200N25N3 G

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IPP200N25N3 G

MOSFETs N-Ch 250V 64A TO220-3 OptiMOS 3

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Spécifications

Packaging Tube
Standard Pack Qty 500

Vue d'ensemble

Description

The IPP200N25N3 G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It is part of the Infineon product line, known for its efficiency and reliability in power switching and amplification. Key specifications typically include a maximum drain-source voltage (V_DS) of 250V, a continuous drain current (I_D) of 200A, and a low on-resistance (R_DS(on)), which minimizes power losses during operation.
This MOSFET is suitable for various applications including power supplies, motor drives, and renewable energy systems, where efficient switching and thermal management are crucial. Its design allows for high-speed operation, making it ideal for applications requiring rapid switching. Additionally, the IPP200N25N3 G features a robust package that aids in heat dissipation, enhancing its performance and lifespan in demanding conditions. Overall, it is a versatile component in modern electronic designs that prioritize efficiency and performance.

Features

The IPP200N25N3 G is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 250V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 200A, allowing for substantial load handling.
3. Low On-Resistance: With a typical R_DS(on) of around 0.15 ohms, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: High-speed switching capabilities, making it ideal for applications in power supplies and converters.
5. Thermal Performance: Good thermal stability and a high maximum junction temperature (T_j) of 175°C, ensuring reliability in demanding environments.
6. Package: Available in a TO-220 package, facilitating effective heat dissipation.
These attributes make the IPP200N25N3 G suitable for applications such as motor drives, industrial power supplies, and automotive systems.

Package

The IPP200N25N3 G is typically packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and allowing for easy heat dissipation.

Pinout

The IPP200N25N3 G is an N-channel MOSFET designed for power applications. It typically comes in a TO-220 package, which has three pins.
1. Gate (G) - This pin is used to control the MOSFET and is connected to the input signal that turns the device on or off.
2. Drain (D) - This pin is where the load current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S) - This pin is connected to the ground or negative side of the power supply and serves as the reference point for the gate voltage.
The IPP200N25N3 G can handle high current and voltage, making it suitable for various applications, including power supplies and motor control.

Manufacturer

The IPP200N25N3 G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company is known for its innovations in power semiconductors, particularly in the areas of MOSFETs, IGBTs, and integrated circuits. Infineon serves various industries, including automotive, industrial, and consumer electronics, and is recognized for its commitment to sustainability and energy efficiency in its products.

Application

The IPP200N25N3 G is an N-channel power MOSFET designed for various applications, including power management in industrial equipment, automotive systems, and renewable energy systems. It is particularly suitable for high-efficiency switching power supplies, motor control, and electronic commutation in traction drives. Its low on-resistance and high-speed switching capabilities make it ideal for applications requiring robust performance and thermal efficiency.

Equivalent

The IPP200N25N3 G is an N-channel MOSFET from Infineon. Equivalent products include:
1. STP200N25 - from STMicroelectronics.
2. IRF200N25 - from Infineon/International Rectifier.
3. FDP200N25 - from ON Semiconductor.
Always verify specifications such as voltage, current rating, and thermal characteristics to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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