IPP110N20N3 G

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IPP110N20N3 G

MOSFETs N-Ch 200V 88A TO220-3 OptiMOS 3

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Spécifications

Packaging Tube
Standard Pack Qty 500

Vue d'ensemble

Description

The IPP110N20N3 G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a 200V voltage rating, making it suitable for high-voltage applications, and has a low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation. This device is commonly used in power supplies, motor control, and automotive applications due to its fast switching capability and robust thermal performance.
Key specifications include a maximum continuous drain current of 110A and a gate threshold voltage (VGS(th)) typically ranging from 2V to 4V. The package design, usually in TO-220 or similar, allows for effective heat dissipation. The IPP110N20N3 G is ideal for designers looking to optimize power efficiency and thermal management in their circuits. Always consult the datasheet for detailed electrical characteristics and thermal management guidelines when integrating this component into your designs.

Features

The IPP110N20N3 G is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, providing excellent voltage handling capabilities.
2. Continuous Drain Current: The device supports a continuous drain current (I_D) rating of 110A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.09 Ohms, which helps minimize conduction losses and improve efficiency.
4. Fast Switching: The MOSFET is optimized for quick switching speeds, enhancing performance in high-frequency applications.
5. Package Type: It typically comes in a TO-220 package, which aids in efficient heat dissipation.
6. Safe Operating Area: Designed with a robust safe operating area (SOA), it provides reliability under various operating conditions.
These features make the IPP110N20N3 G suitable for use in power supplies, motor drives, and industrial applications.

Package

The IPP110N20N3 G is typically packaged in a TO-220 format, which is a commonly used package type for power transistors. This package offers good thermal performance and ease of heat dissipation, making it suitable for high-power applications.

Pinout

The IPP110N20N3 G is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D): This pin is where the output current exits the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or the negative side of the supply voltage in typical applications, serving as the reference point for the gate voltage.
4. Body Diode (not a pin but an internal feature): It allows current to flow in the opposite direction, providing protection against reverse polarity.
The IPP110N20N3 G is designed for high-efficiency applications, supporting a voltage rating of 200V and a continuous current rating of 110A.

Manufacturer

The IPP110N20N3 G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company plays a significant role in various sectors, including automotive, industrial, and consumer electronics, and is known for its innovation in power semiconductors and microcontrollers. Infineon focuses on enhancing energy efficiency and sustainability through its products, making it a key player in the global semiconductor industry.

Application

The IPP110N20N3 G is an N-channel MOSFET commonly used in applications such as power supplies, motor drives, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for automotive, industrial, and consumer electronics. Additionally, it can be found in switching applications, load management, and power amplification circuits.

Equivalent

The IPP110N20N3 G is a N-channel MOSFET with a voltage rating of 200V and a current rating of 110A. Equivalent products include:
1. STP110N20 (STMicroelectronics)
2. IRF110N20 (Infineon)
3. FQP110N20 (ON Semiconductor)
Always verify specifications such as R_DS(on), gate charge, and packaging before replacement.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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