IPP045N10N3G

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IPP045N10N3G

POWER FIELD-EFFECT TRANSISTOR, 1

  • Fabricant
  • Mfr. Partie #IPP045N10N3G
  • Paquet TO-220
  • Fiche de données
  • En stock4303

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Vue d'ensemble

Description

The IPP045N10N3G is a high-performance N-channel MOSFET developed by Infineon Technologies. It features a voltage rating of 100V, a continuous drain current of 45A, and a low on-resistance (R_DS(on)) of approximately 4.5 mΩ, making it suitable for high-efficiency power applications. Designed for use in switch-mode power supplies (SMPS), motor drives, and other high-frequency applications, this MOSFET offers low gate charge, which enhances switching performance and reduces power losses.
The IPP045N10N3G is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting. Its robust design ensures reliability under various operating conditions, while its fast switching capabilities contribute to improved system efficiency. This MOSFET is ideal for engineers looking for reliable and efficient components in their electronic designs.

Features

The IPP045N10N3G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Continuous drain current (I_D) of 45A, suitable for high power applications.
3. On-Resistance: Low on-resistance (R_DS(on)) of around 10 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: Typically around 2-4V, allowing for easier drive requirements.
5. Packaging: Available in a TO-220 package, facilitating heat dissipation.
6. Fast Switching: Designed for fast switching applications, enabling high-frequency operation.
7. Thermal Performance: Excellent thermal characteristics with a high junction-to-case thermal resistance.
These features make the IPP045N10N3G suitable for use in applications like power supplies, motor drivers, and DC-DC converters, where efficiency and thermal management are critical.

Package

The IPP045N10N3G is packaged in a TO-220 format. This package type provides efficient thermal performance and is suitable for high-power applications.

Pinout

The IPP045N10N3G is an N-channel MOSFET produced by Infineon Technologies. It features a TO-220 package with three pins. The pinout and functions are as follows:
1. Gate (G) - This pin controls the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.

2. Drain (D) - This is the terminal through which the current exits the MOSFET when it is in the on-state.

3. Source (S) - This terminal connects to the ground or a reference point for the current flowing through the MOSFET.
The IPP045N10N3G is notable for its low on-resistance and capability to handle high currents, making it suitable for various applications such as power management and motor control. Its maximum ratings include a V_DS (drain-source voltage) of 100V and an I_D (drain current) of 45A.

Manufacturer

The IPP045N10N3G is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a wide range of products, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. Infineon focuses on providing innovative solutions for energy efficiency, mobility, and security, making it a key player in the semiconductor market. The IPP045N10N3G is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications, particularly in power management systems.

Application

The IPP045N10N3G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drives, and LED drivers. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power conversion in automotive, industrial, and consumer electronics. It can also be utilized in renewable energy systems, such as solar inverters, due to its ability to handle high currents and voltages.

Equivalent

The IPP045N10N3G is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP45NF10
3. FQP45N10
4. PSMN2R8-10
5. BUK7M45-55
Always verify specifications such as Vds, Id, Rds(on), and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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