IPL60R075CFD7

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IPL60R075CFD7

MOSFETs HIGH POWER_NEW

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Vue d'ensemble

Description

The IPL60R075CFD7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for industrial applications. It is part of the Infineon family of products and is known for its efficiency and reliability in power electronics. This particular device features a voltage rating of 600V and a current rating of 75A, making it suitable for various applications like motor drives, power supplies, and renewable energy systems.
The module is designed for easy integration into various circuits, offering low switching losses and high thermal efficiency. It typically comes in a compact package, providing improved heat dissipation and reducing the overall footprint in designs. Additionally, the IPL60R075CFD7 supports high-frequency operations, enhancing its performance in dynamic applications.
Overall, it is an excellent choice for engineers looking for robust and efficient switching solutions in their power electronic designs.

Features

The IPL60R075CFD7 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
- Voltage Rating: Capable of handling a maximum drain-source voltage (Vds) of 60V.
- Continuous Drain Current: Supports a continuous drain current (Id) of 75A, allowing for high power delivery.
- On-Resistance (Rds(on)): Low on-resistance typically around 7.5 mΩ, which minimizes conduction losses and improves efficiency.
- Fast Switching Speed: Designed for fast switching applications, making it suitable for various power management tasks.
- Package Type: Available in a TO-220 package, facilitating easy thermal management and integration into circuits.
- Gate Threshold Voltage: Features a low gate threshold voltage, enhancing drive capability.
These characteristics make the IPL60R075CFD7 ideal for applications like power supplies, motor drives, and other high-performance electronic systems.

Package

The IPL60R075CFD7 is packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power semiconductor devices, allowing for easy mounting and thermal management in various applications.

Pinout

The IPL60R075CFD7 is an N-channel MOSFET produced by Infineon Technologies. It features a total of 4 pins. The pin configuration typically includes:
1. Gate (G) - This pin controls the MOSFET's switching.
2. Drain (D) - This is the output pin where the load is connected.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply.
4. Tab - The tab serves as a thermal interface and is typically connected to the source.
The IPL60R075CFD7 is designed for high-power applications, providing low on-resistance (R_DS(on)) and fast switching capabilities, making it suitable for use in power conversion circuits, motor drives, and other high-efficiency designs.

Manufacturer

The IPL60R075CFD7 is manufactured by Infineon Technologies AG, a global semiconductor company based in Germany. Infineon specializes in the design and production of a wide range of electronic components, including power semiconductors, microcontrollers, and sensors. The company focuses on applications in automotive, industrial, and IoT sectors, providing solutions that enhance energy efficiency, safety, and connectivity. Infineon is recognized for its innovation in power management and has a strong commitment to sustainability in its operations and product offerings.

Application

The IPL60R075CFD7 is an IGBT (Insulated Gate Bipolar Transistor) used in various applications including motor drives, power inverters, and industrial automation. It's suitable for renewable energy systems like solar inverters, as well as for electric vehicles and UPS systems. Its high efficiency and fast switching capabilities make it ideal for applications requiring high power and reliable performance.

Equivalent

The IPL60R075CFD7 is an IGBT (Insulated Gate Bipolar Transistor) commonly used in power applications. Equivalent products include the Infineon IGBT modules like the BSM150GB120DN2, the Mitsubishi MG100J6ES, and the ON Semiconductor FGA60N65SMD. Always verify specifications such as voltage, current, and switching frequency for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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