IPG20N10S4L-35

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IPG20N10S4L-35

MOSFETs MOSFET

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Standard Pack Qty 5000

Vue d'ensemble

Description

The IPG20N10S4L-35 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for medium-voltage applications. Featuring a voltage rating of 1000V and a current rating of 20A, it provides efficient switching and low conduction losses, making it suitable for various power electronics applications, including inverters, motor drives, and power supplies.
This IGBT incorporates advanced features such as a low gate-to-emitter threshold voltage, enabling easier drive requirements and enhanced reliability. It is optimized for fast switching speeds, which helps improve overall system efficiency and performance. The device is typically housed in a TO-247 package, providing excellent thermal management.
In summary, the IPG20N10S4L-35 is ideal for applications in renewable energy systems, industrial drives, and electric vehicles, where efficient power conversion and compact design are essential.

Features

The IPG20N10S4L-35 is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (ID) of up to 20A, allowing it to manage significant loads.
3. Low On-Resistance: Offers a low RDS(on) value, typically around 35 mΩ, which minimizes power loss and improves efficiency.
4. Fast Switching Speed: Designed for fast switching applications, reducing transition losses in power electronics.
5. Thermal Management: Features a TO-220 package that aids in effective heat dissipation, enhancing performance under load.
6. Applications: Ideal for use in switch mode power supplies (SMPS), motor drives, and other high-frequency power applications.
Overall, the IPG20N10S4L-35 is a robust choice for engineers seeking efficiency and reliability in power management solutions.

Package

The IPG20N10S4L-35 is typically packaged in a TO-247 format, which is a robust, power semiconductor package designed for high thermal performance and ease of mounting.

Pinout

The IPG20N10S4L-35 is an N-channel MOSFET with a typical pin count of 4. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET and requires a voltage to turn the device on or off.

2. Drain (D): This is the output terminal where the load is connected. It allows current to flow when the MOSFET is turned on.
3. Source (S): This pin serves as the reference point for the gate voltage and is typically connected to ground in low-side switching applications.
4. Tab (T): The tab is usually connected to the source and can be used for heat dissipation.
The IPG20N10S4L-35 is designed for high-voltage applications, handling currents up to 20A and voltages up to 1000V, making it suitable for various power electronics applications.

Manufacturer

The manufacturer of the IPG20N10S4L-35 is Infineon Technologies. Infineon is a global semiconductor company based in Germany that specializes in providing a wide range of semiconductor and system solutions. Their product portfolio includes power semiconductors, microcontrollers, sensors, and automotive electronics, among others. Infineon serves various industries, including automotive, industrial, and consumer electronics, focusing on innovation and efficiency in energy management and connectivity. The IPG20N10S4L-35 is a part of their IGBT (Insulated Gate Bipolar Transistor) product line, designed for high-performance applications in power conversion and management.

Application

The IPG20N10S4L-35 is an IGBT (Insulated Gate Bipolar Transistor) used in various high-power applications, including motor drives, inverters, and power supplies. It is suitable for industrial automation, renewable energy systems (like solar inverters), and electric vehicle applications, where efficient switching and high voltage handling are essential. Additionally, it can be used in power conversion systems and welding equipment.

Equivalent

The IPG20N10S4L-35 is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the Infineon FGH50N60SMD, ON Semiconductor MGD60N65, and Mitsubishi CM100DY-24H. Ensure to check specific ratings and parameters like voltage, current, and switching frequency for compatibility.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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