IPD90N04S3-04

The IPD90N04S3-04 is a high-performance N-channel MOSFET designed for power applications, particularly in automotive and industrial sectors. It features a low on-resistance (R_DS(on)) of 4 mΩ, which minimizes conduction losses and enhances efficiency. With a maximum drain-source voltage (V_DS) of 40V, it is suitable for various applications requiring robust performance under high current conditions, up to 90A.
This MOSFET is known for its fast switching capabilities, making it ideal for applications like DC-DC converters, motor drives, and other power management systems. It is housed in a DPAK package, which provides good thermal performance due to its larger surface area, allowing for better heat dissipation.
Key specifications include a maximum gate-to-source voltage (V_GS) of ±20V and a total gate charge (Q_g) that facilitates efficient driving. Overall, the IPD90N04S3-04 is a versatile component that enhances the performance of various electronic systems by providing reliable, high-speed switching and efficient power management.

The IPD90N04S3-04 is a N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 40V.
2. Continuous Drain Current: The device supports high continuous drain current with a rating of up to 90A, making it suitable for demanding applications.
3. On-Resistance (R_DS(on)): It features low on-resistance, typically around 4mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Performance: With good thermal conductivity, it helps maintain lower junction temperatures during operation.
6. Package Type: It comes in a TO-220 package, facilitating easy mounting and heat dissipation.
These features make the IPD90N04S3-04 ideal for applications in automotive, industrial, and power management systems.

The IPD90N04S3-04 is typically packaged in a DPAK (TO-252) package type. This package offers a compact size with good thermal performance, suitable for power applications.

The IPD90N04S3-04 is an N-channel MOSFET with a pin count of 5. The pin functions are as follows:
1. Gate (G): Controls the MOSFET operation; applying a voltage here turns the device on or off.
2. Drain (D): The main current-carrying terminal where the load is connected.
3. Source (S): Connected to the ground or negative supply in a typical application; it is the return path for current.
The additional two pins are typically used for package mounting and heat dissipation. The IPD90N04S3-04 is designed for high-efficiency applications, supporting high current and low on-resistance, making it suitable for power management and switching applications.

The IPD90N04S3-04 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor solutions, including power semiconductors, sensors, microcontrollers, and security products. Infineon's technologies are widely used in automotive, industrial, and consumer electronics sectors, emphasizing energy efficiency, connectivity, and security.

The IPD90N04S3-04 is an N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and high-speed performance make it suitable for automotive applications, renewable energy systems, and industrial automation. Additionally, it can be utilized in consumer electronics for efficient power switching and regulation.

The IPD90N04S3-04 is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP90NF06
3. FQP90N06
4. SI7250DP
5. BUK9YB10-100
Always check specifications for voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.